International Rectifier IRF9530N Datasheet
PD - 91482C
IRF9530N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
D
V
R
DS(on)
= -100V
DSS
= 0.20Ω
ID = -14A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -14
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -10 A
I
DM
PD @TC = 25°C Power Dissipation 79 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -56
Linear Derating Factor 0.53 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 250 mJ
Avalanche Current -8.4 A
Repetitive Avalanche Energy 7.9 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 1.9
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Typ. Max. Units
5/13/98
IRF9530N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = -10V, ID = -8.4A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 3.2 ––– ––– S VDS = -50V, ID = -8.4A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– – –– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– – – – 58 ID = -8.4A
Gate-to-Source Charge ––– ––– 8.3 nC VDS = -80V
Gate-to-Drain ("Miller") Charge ––– ––– 32 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 15 ––– VDD = -50V
Rise Time ––– 58 ––– ID = -8.4A
Turn-Off Delay Time ––– 45 ––– RG = 9.1Ω
ns
Fall Time ––– 46 ––– RD = 6.2Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 760 ––– VGS = 0V
Output Capacitance ––– 260 –– – pF VDS = -25V
Reverse Transfer Capacitance –– – 170 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -8.4A, VGS = 0V
Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = -8.4A
Reverse RecoveryCharge ––– 650 970 nC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= 25°C, L = 7.0mH
J
= -8.4A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
-14
-56
showing the
A
p-n junction diode.
≤ -8.4A, di/dt ≤ -490A/µs, V
DD
≤ V
(BR)DSS
D
G
S
,
IRF9530N
A
A
)
A
100
VGS
TO P - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
BOT TO M - 4.5V
10
1
D
-I , Dra in-to-Sou rc e C u rre nt (A )
-4.5 V
20µs PULSE WIDTH
T = 2 5°C
0.1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
100
c
100
VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
1
D
-I , Drain -to-S ou rce C urre nt (A )
20µs PULSE WIDTH
T = 175°C
0.1
0.1 1 10 100
-V , Dra in-t o-So u rc e V o ltage (V
DS
C
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
-14A
T = 25°C
10
1
D
-I , Drain-to-Source Current (A)
0.1
45678910
J
T = 175°C
J
V = -50 V
DS
20µs PULSE W IDTH
-V , Ga te-to- So urc e V o ltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
°
-10V
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