International Rectifier IRF9520NS, IRF9520NL Datasheet
PD -91522A
IRF9520NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF9520S)
l Low-profile through-hole (IRF9520L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
G
D
V
R
DS(on)
= -100V
DSS
= 0.48Ω
ID = -6.8A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
2
Pak is a surface mount power package capable of
The D
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
2
D Pak
TO-262
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9520L) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -6.8
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -4.8 A
I
DM
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 48 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -27
Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 140 mJ
Avalanche Current -4.0 A
Repetitive Avalanche Energy 4.8 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 3.1
Junction-to-Ambient ( PCB Mounted,steady-state)** –– – 40
°C/W
°C
5/13/98
IRF9520NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.10 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.48 Ω VGS = 10V, ID = -4.0A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 1.4 ––– ––– S VDS = -50V, ID = -4.0A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 27 ID = -4.0A
Gate-to-Source Charge ––– ––– 5.0 nC VDS = -80V
Gate-to-Drain ("Miller") Charge ––– ––– 15 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = -50V
Rise Time ––– 47 ––– ID = -4.0A
Turn-Off Delay Time ––– 28 –– – RG = 22Ω
ns
Fall Time ––– 31 ––– RD = 12Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 350 ––– VGS = 0V
Output Capacitance ––– 1 10 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 70 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-6.8
-27
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -4.0A, VGS = 0V
Reverse Recovery Time ––– 100 150 n s TJ = 25°C, IF = -4.0A
Reverse Recovery Charge ___ 420 630 nC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%
= 25°C, L = 18mH
J
= -4.0A. (See Figure 12)
AS
≤ -4.0A, di/dt ≤ -300A/µs, V
DD
≤ V
(BR)DSS
Uses IRF9520N data and test conditions
,
D
G
S
IRF9520NS/L
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
-4.5V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics,
100
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
-4.5V
20µs PULSE WIDTH
T = 175 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics,
2.5
I =
D
-6.7A
°
T = 175 C
J
10
T = 25 C
J
1
D
-I , Drain-to-Source Current (A)
V = 10V
DS
0.1
4 5 6 7 8 9 10
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
V =
GS
°
-10V
Fig 4. Normalized On-Resistance
Vs. Temperature
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