International Rectifier IRF9520N Datasheet
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
PD - 91521A
IRF9520N
HEXFET® Power MOSFET
D
V
= -100V
DSS
G
S
R
TO-220AB
= 0.48Ω
DS(on)
ID = -6.8A
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -6.8
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -4.8 A
I
DM
PD @TC = 25°C Power Dissipation 48 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J
T
STG
Pulsed Drain Current -27
Linear Derating Factor 0.32 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 140 mJ
Avalanche Current -4.0 A
Repetitive Avalanche Energy 4.8 m J
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 3.1
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
°C
5/13/98
IRF9520N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.10 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.48 Ω VGS = -10V, ID = -4.0A
Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 1.4 ––– ––– S VDS = -50V, ID = -4.0A
Drain-to-Source Leakage Current
––– ––– -25
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– –– – 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = -100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– – – – 27 ID = -4.0A
Gate-to-Source Charge ––– ––– 5.0 nC VDS = -80V
Gate-to-Drain ("Miller") Charge ––– ––– 15 VGS = -10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = -50V
Rise Time ––– 47 ––– ID = -4.0A
Turn-Off Delay Time ––– 28 ––– RG = 22Ω
ns
Fall Time ––– 31 ––– RD = 12Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 350 ––– VGS = 0V
Output Capacitance ––– 110 –– – pF VDS = -25V
Reverse Transfer Capacitance –– – 70 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -4.0A, VGS = 0V
Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = -4.0A
Reverse RecoveryCharge ––– 420 630 nC di/dt = -100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= 25°C, L = 18 mH
J
= -4.0A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
-6.8
-27
showing the
A
p-n junction diode.
≤ -4.0A, di/dt ≤ -300A/µs, V
DD
≤ V
(BR)DSS
D
G
S
,
IRF9520N
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
-4.5V
20µs PULSE WIDTH
T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 1. Typical Output Characteristics,
100
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
-4.5V
-4.5V
20µs PULSE WIDTH
T = 150 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output Characteristics,
2.5
I =
D
-6.7A
°
T = 175 C
J
10
T = 25 C
J
1
D
-I , Drain-to-Source Current (A)
V = 10V
DS
0.1
4 5 6 7 8 9 10
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
°
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
V =
GS
°
-10V
Fig 4. Normalized On-Resistance
Vs. Temperature
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