International Rectifier IRF9410 Datasheet
PD - 9.1562A
PRELIMINARY
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
IRF9410
HEXFET® Power MOSFET
A
A
81
S
2
S
3
S
4
Top View
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
D
V
= 30V
R
DS(on)
DSS
= 0.030Ω
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Pulsed Drain Current I
Continuous Source Current (Diode Conduction) I
Maximum Power Dissipation
Single Pulse Avalanche Energy E
Avalanche Current I
Repetitive Avalanche Energy E
Peak Diode Recovery dv/dt dv/dt 5.0 V/ ns
Junction and Storage Temperature Range T
TA = 25°C 7.0
TA = 70°C 5.8
TA = 25°C 2.5
TA = 70°C 1.6
DS
GS
I
D
DM
S
P
D
AS
AR
AR
J, TSTG
30
± 20
37
2.8
70 mJ
4.2 A
0.25 mJ
-55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-Ambient R
θJA
50
V
A
W
°C/W
9/15/97
IRF9410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
J
= 10V, ID = 7.0A
GS
= 5.0V, ID = 4.0A
GS
Static Drain-to-Source On-Resistance
––– 0.024 0.030 V
––– 0.032 0.040 Ω V
––– 0.037 0.050 VGS = 4.5V, ID = 3.5A
Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance –– – 14 ––– S VDS = 15V, ID = 7.0A
Drain-to-Source Leakage Current
––– ––– 2.0
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
µA
nA
= 24V, VGS = 0V
V
DS
= 20V
V
GS
Total Gate Charge ––– 18 2 7 ID = 2.0A
Gate-to-Source Charge –– – 2.4 3.6 nC VDS = 15V
Gate-to-Drain ("Miller") Charge ––– 4.9 7.4 VGS = 10V, See Fig. 10
Turn-On Delay Time ––– 7.3 1 5 VDD = 25V
Rise Time ––– 8.3 17
Turn-Off Delay Time ––– 23 46 RG = 6.0Ω, VGS = 10V
ns
ID = 1.0A
Fall Time ––– 17 34 RD = 25Ω
Input Capacitance ––– 550 ––– VGS = 0V
Output Capacitance ––– 260 ––– pF VDS = 25V
Reverse Transfer Capacitance – –– 1 0 0 ––– ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Surface mounted on FR-4 board, t ≤ 10sec.
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
––– ––– 37
Diode Forward Voltage ––– 0.78 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V
Reverse Recovery Time ––– 40 80 n s TJ = 25°C, IF = 2.0A
Reverse RecoveryCharge ––– 63 130 nC di/dt = 100A/µs
I
≤ 4.6A, di/dt ≤ 120A/µs, V
SD
TJ ≤ 150°C
= 25°C, L = 6.6mH
J
= 4.6A.
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2.8
D
A
DD
≤ V
(BR)DSS
,
G
S
IRF9410
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
10
D
I , Drain-to-Source Cu rrent (A)
1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
3.0V
20µs PULS E W I DT H
T = 25 °C
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTT OM 3.0V
10
3.0V
D
I , Drain-to-Source Current (A)
20µs PULS E W I DT H
T = 150°C
A
1
0.1 1 10
V , Drain-to -Sou rce Vo ltage ( V)
DS
J
A
Fig 2. Typical Output Characteristics
100
T = 25°C
J
T = 150°C
J
10
D
I , Dr a in -to -Sou rce C u rrent (A)
1
3.0 3.5 4.0 4.5 5.0 5.5
V , Ga te-to-So urce Voltage (V)
GS
V = 10V
DS
20µs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
10
T = 150°C
J
T = 25°C
J
1
SD
I , Rev ers e Dr ain C u rren t (A)
V = 0V
A
0.1
0.4 0.6 0.8 1.0 1.2
V , Source-to-Drain Voltage (V)
SD
GS
A
Fig 4. Typical Source-Drain Diode
Forward Voltage
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