International Rectifier IRF9240 Datasheet

PD - 90420
REPETITIVE A V ALANCHE AND dv/dt RA TED IRF9240
HEXFETTRANSISTORS 200V, P-CHANNEL THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF9240 -200V 0.5 -11A
The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis­tance combined with high transconductance; superior re­verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab­lished advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Features:
n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling
TO-3
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current -1 1
ID @ VGS = 0V, TC = 100°C Continuous Drain Current -7.0
I
DM
PD @ TC = 25°C Max. Power Dissipation 12 5 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt -5.0
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current -44
Linear Derating Factor 1. 0 W/°C Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 500 mJ Avalanche Current -11 A Repetitive Avalanche Energy 12.5 mJ
Operating Junction -55 to 150 Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5(typical) g
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A
V/ns
o
C
01/24/01
IRF9240
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
t
BV BV
V g I
DSS
I
GSS
I Q Q Q t
d(on)
t t
d(off)
L
DSS
DSS
DS(on)
GS(th)
fs
GSS
g gs
gd
r
f
S + LD
iss oss rss
Drain-to-Source Breakdown Voltage -200 V VGS = 0V, ID = -1.0mA
/TJTemperature Coefficient of Breakdown -0.20 V/°C Reference to 25°C, ID = -1.0mA
Voltage Static Drain-to-Source On-State 0 .5 VGS = -10V, ID = -7.0A Resistance — 0.58 VGS = -10V, ID = -11A Gate Threshold Voltage -2.0 -4.0 V VDS = VGS, ID = -250µA Forward Transconductance 4. 0 S ( )VDS > -15V, IDS = -7.0A Zero Gate Voltage Drain Current - 25 VDS=-160V, VGS=0V
-250 VDS =-160V
Gate-to-Source Leakage Forward -100 VGS = -20V Gate-to-Source Leakage Reverse 100 VGS = 20V Total Gate Charge 2 8 60 VGS =-10V, ID = -11A Gate-to-Source Charge 3. 0 1 5 nC VDS =-100V Gate-to-Drain (‘Miller’) Charge 4. 5 3 8 Turn-On Delay Time 3 5 VDD = -100V, ID = -11A, Rise Time 85 RG = 9.1 Turn-Off Delay Time 8 5 Fall Time 6 5 Total Inductance 6 .1
Input Capacitance 1200 VGS = 0V, VDS = -25V Output Capacitance 57 0 pF f = 1.0MHz Reverse Transfer Capacitance 8 1
µA
nA
ns
nH
VGS = 0V, TJ = 125°C
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) - 11
S
I
Pulse Source Current (Body Diode) -44
SM
V
Diode Forward Voltage -4.6 V Tj = 25°C, IS =-11A, VGS = 0V
SD
t
Reverse Recovery Time 27 0 44 0 nS Tj = 25°C, IF = -11A, di/dt -100A/µs
rr
Q
Reverse Recovery Charge 7 .2 µC VDD -50V
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
thJC
thJA
For footnotes refer to the last page
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Junction-to-Case 1. 0 Junction-to-Ambient — 30 soldered to a 2” square copper-clad board
°C/W
+ LD.
IRF9240
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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