International Rectifier IRF9140 Datasheet
PD - 93976A
REPETITIVE A V ALANCHE AND dv/dt RA TED IRF9140
HEXFETTRANSISTORS 100V, P-CHANNEL
THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number BVDSS RDS(on) ID
IRF9140 -100V 0.2Ω -18A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
TO-3
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current -1 8
ID @ VGS = 0V, TC = 100°C Continuous Drain Current -1 1
I
DM
PD @ TC = 25°C Max. Power Dissipation 12 5 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ -5.5
T
J
T
STG
For footnotes refer to the last page
Pulsed Drain Current ➀ -72
Linear Derating Factor 1. 0 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 500 mJ
Avalanche Current ➀ -18 A
Repetitive Avalanche Energy ➀ 12.5 mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
www.irf.com 1
A
V/ns
o
C
01/22/01
IRF9140
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
DSS
Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA
/∆TJTemperature Coefficient of Breakdown — -0.087 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
Static Drain-to-Source On-State — — 0. 2 VGS = -10V, ID = -11A ➃
Resistance — — 0.23 VGS =-10V, ID = -18A ➃
Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
Ω
t
C
g
I
DSS
I
GSS
I
GSS
Q
Q
Q
t
d(on)
t
t
d(off)
L
C
C
fs
g
gs
gd
r
f
S + LD
iss
oss
rss
Forward Transconductance 6. 2 — — S ( ) VDS > -15V, IDS = -11A ➃
Zero Gate Voltage Drain Current — — -2 5 VDS= -80V , VGS=0V
— — -250 µA VDS = -80V
Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 1 00 n A VGS = 20V
Total Gate Charge 3 1 — 6 0 VGS =-10V, ID = -18A
Gate-to-Source Charge 3. 7 — 1 3 nC VDS= -50V
Gate-to-Drain (‘Miller’) Charge 7. 0 — 35.2
Turn-On Delay Time — — 3 5 VDD = -50V, ID = -18A,
Rise Time — — 85 RG =9.1Ω
Turn-Off Delay Time — — 85
Fall Time — — 65
Total Inductance — 6. 1 —
Input Capacitance — 1400 VGS = 0V, VDS = -25V
Output Capacitance — 6 00 — p F f = 1.0MHz
Reverse Transfer Capacitance — 2 00 —
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I
Continuous Source Current (Body Diode) — — - 18
S
I
Pulse Source Current (Body Diode) ➀ — — -72
SM
V
Diode Forward Voltage — — -4.2 V Tj = 25°C, IS =-18A, VGS = 0V ➃
SD
t
Reverse Recovery Time — 17 0 28 0 nS Tj = 25°C, IF = -18A, di/dt ≤ -100A/µs
rr
Q
Reverse Recovery Charge — — 3 .6 µC VDD ≤ -50V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
Ω
VGS = 0V, TJ = 125°C
ns
Measured from drain lead (6mm/0.25in. from
nH
package) to source lead (6mm/0.25in. from
package)
A
+ LD.
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 1. 0
Junction-to-Ambient — — 30 Soldered to a 2” square copper-clad board
°C/W
IRF9140
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com 3
Loading...