International Rectifier IRF840LCS, IRF840LCL Datasheet
PD- 93766
IRF840LCS
IRF840LCL
HEXFET® Power MOSFET
l Ultra Low Gate Charge
l Reduced Gate Drive Requirement
l Enhanced 30V V
l Reduced C
l Extremely High Frequency Operation
l Repetitive Avalanche Rated
ISS
, C
Rating
GS
OSS
, C
RSS
Description
G
D
V
= 500V
DSS
R
DS(on)
= 0.85Ω
ID = 8.0A
S
This new series of low charge HEXFET® power MOSFETs
achieve significant lower gate charge over conventional
MOSFETs. Utilizing the new LCDMOS (low charge
device MOSFETs) technology, the device improvements
are achieved without added product cost, allowing for
reduce gate drive requirements and total system savings.
In addition, reduced switching losses and improved
efficiency and achievable in a variety of high frequency
applications. Frequencies of a few MHz at high current
are possible using the new low charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize of HEXFET
power MOSFETs offer the designer a new power
D2Pak
IRF840LCS
TO-262
IRF840LCL
transistor standard for switching applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.1 A
I
DM
PD @TA = 25°C Power Dissipation 3.1 W
PD @TC = 25°C Power Dissipation 125 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
T
J
T
STG
Pulsed Drain Current 28
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ± 30 V
Single Pulse Avalanche Energy‚ 510 mJ
Avalanche Current 8.0 A
Repetitive Avalanche Energy 13 m J
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
www.irf.com 1
Junction-to-Case ––– 1.0
Junction-to-Ambient (PCB Mounted,steady-state)** ––– 40
°C/W
1/3/2000
IRF840LCS/LCL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 5 00 – –– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.63 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.85 Ω VGS = 10V, ID = 4.8A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 4.0 ––– ––– S VDS = 50V, ID = 4.8A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– – –– 39 ID = 8.0A
Gate-to-Source Charge ––– ––– 10 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 19 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 12 ––– VDD = 250V
Rise Time ––– 25 ––– ID = 8.0A
Turn-Off Delay Time ––– 27 ––– RG = 9.1Ω
ns
Fall Time ––– 19 ––– RD = 30Ω, See Fig. 10
Internal Source Inductance
––– –––
7.5
Between lead,
nH
and center of die contact
Input Capacitance ––– 1100 ––– VGS = 0V
Output Capacitance ––– 170 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 18 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
8.0
28
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V
Reverse Recovery Time ––– 490 740 ns TJ = 25°C, IF = 8.0A
Reverse Recovery Charge ––– 3.0 4.5 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 14mH
J
AS
≤ 8.0A, di/dt ≤ 100A/µs, V
= 8.0A. (See Figure 12)
≤ V
DD
(BR)DSS
Uses IRF840LC data and test conditions
,
TJ ≤ 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended soldering techniques refer to application note #AN-994.
2 www.irf.com
D
S
IRF840LCS/LCL
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
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