International Rectifier IRF840A Datasheet
PD- 91900A
SMPS MOSFET
IRF840A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.1 A
I
DM
PD @TC = 25°C Power Dissipation 125 W
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 32
Linear Derating Factor 1.0 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
Rds(on) max I
500V 0.85Ω 8.0A
TO-220AB
SDG
°C
D
Typical SMPS Topologies:
l Two Transistor Forward
l Haft Bridge
l Full Bridge
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IRF840A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 56 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
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Drain-to-Source Breakdown Voltage 500 ––– –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.58 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.85 Ω VGS = 10V, ID = 4.8A
Gate Threshold Voltage 2. 0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 3.7 ––– ––– S VDS = 50V, ID = 4.8A
Total Gate Charge ––– ––– 38 ID = 8.0A
Gate-to-Source Charge ––– ––– 9.0 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 18 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 250V
Rise Time ––– 23 ––– ID = 8.0A
Turn-Off Delay Time ––– 26 ––– RG = 9.1Ω
ns
Fall Time ––– 19 ––– RD = 31Ω,See Fig. 10
Input Capacitance ––– 1018 ––– VGS = 0V
Output Capacitance ––– 155 ––– VDS = 25V
Reverse Transfer Capacitance ––– 8.0 –– – pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 42 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 510 mJ
Avalanche Current ––– 8.0 A
Repetitive Avalanche Energy ––– 13 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 1.0
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient 62
Parameter Min. Typ. Max. U nits Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V
Reverse Recovery Time ––– 422 633 ns TJ = 25°C, IF = 8.0A
Reverse RecoveryCharge ––– 2.0 3.0 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
8.0
32
showing the
A
p-n junction diode.
G
D
S
IRF840A
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 25 C
V , Drain-to-Source Voltage (V)
DS
4.5V
J
°
Fig 1. Typical Output Characteristics
100
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 150 C
0.1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
3.0
I =
D
8.0
7.4A
2.5
°
T = 150 C
10
J
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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