International Rectifier IRF820A Datasheet
PD- 93773A
SMPS MOSFET
IRF820A
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective C
specified (See AN 1001)
OSS
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 2.5
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 1.6 A
I
DM
PD @TC = 25°C Power Dissipation 50 W
V
GS
dv/dt Peak Diode Recovery dv/dt 3.4 V/ns
T
J
T
STG
Pulsed Drain Current 10
Linear Derating Factor 0.4 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
V
DSS
RDS(on) max I
500V 3.0Ω 2.5A
TO-220AB
SDG
°C
D
Typical SMPS Topologies:
l Two transistor Forward
l Half Bridge and Full Bridge
Notes through are on page 8
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5/8/00
IRF820A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 28 ––– VGS = 0V, VDS = 0V to 400V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
θJC
R
θCS
R
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
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Drain-to-Source Breakdown Voltage 500 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 3.0 Ω VGS = 10V, ID = 1.5A
Gate Threshold Voltage 2.0 ––– 4.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 500V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 1.4 ––– ––– S VDS = 50V, ID = 1.5A
Total Gate Charge ––– ––– 17 ID = 2.5A
Gate-to-Source Charge ––– ––– 4.3 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 8.1 ––– VDD = 250V
Rise Time ––– 12 ––– ID = 2.5A
Turn-Off Delay Time ––– 16 ––– RG = 21Ω
ns
Fall Time ––– 13 ––– RD = 97Ω,See Fig. 10
Input Capacitance ––– 340 ––– VGS = 0V
Output Capacitance ––– 53 ––– VDS = 25V
Reverse Transfer Capacitance ––– 2.7 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 490 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 15 ––– VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 140 mJ
Avalanche Current ––– 2.5 A
Repetitive Avalanche Energy ––– 5.0 mJ
Parameter Typ. Max. Units
Junction-to-Case ––– 2.5
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 2.5A, VGS = 0V
Reverse Recovery Time ––– 330 500 ns TJ = 25°C, IF = 2.5A
Reverse RecoveryCharge ––– 760 1140 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2.5
10
showing the
A
p-n junction diode.
G
D
S
IRF820A
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
0.1 1 10 100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
10
1
D
I , Drain-to-Source Current (A)
0.1
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
1 10 100
V , Drain-to-Source Voltage (V)
DS
°
T = 150 C
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5A
I =
D
°
T = 150 C
J
1
°
T = 25 C
J
0.1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.01
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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