International Rectifier IRF7822 Datasheet
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Conv erters
• Low Conduction Losses
• Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
R
, gate charge and Cdv/dt-induced turn-on immunity .
DS(on)
The IRF7822 offers particulary low R
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
and high Cdv/
DS(on)
PD - 94279
IRF7822
1
S
2
S
3
S
4
SO-8
DEVICE CHARACTERISTICSU
IRF7822
R
(on)
DS
Q
G
Q
sw
Q
oss
5.0mΩ
44nC
12nC
27nC
Top View
A
8
D
7
D
6
D
5
DG
Absolute Maximum Ratings
Parameter Symbol IRF7822 Units
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain or Source T
Current (V
≥ 4.5V) TA = 70°C 13 A
GS
= 25°C I
A
Pulsed Drain CurrentQ I
Power Dissipation T
= 25°CP
A
T
= 70°C 3.0
A
Junction & Storage Temperature Range T
Continuous Source Current (Body Diode) I
Pulsed Source CurrentQ I
DS
GS
D
DM
D
J, TSTG
S
SM
30 V
±12
18
150
3.1 W
–55 to 150 °C
3.8 A
150
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-AmbientS R
Maximum Junction-to-Lead R
θJA
θJL
40 °C/W
20 °C/W
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07/11/01
IRF7822
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BV
Breakdown Voltage
Static Drain-Source R
on Resistance
Gate Threshold Voltage V
Drain-Source Leakage I
Current
Current* 150 µA V
Gate-Source Leakage I
Current
DSS
GSS
Total Gate Chg Cont FET Q
Total Gate Chg Sync FET Q
Pre-Vth Q
Gate-Source Charge
Post-Vth Q
Gate-Source Charge
Gate to Drain Charge Q
Switch Chg(Q
+ Qgd) Q
gs2
Output Charge Q
Gate Resistance R
Turn-on Delay Time t
Rise Time t
d (on)
r
Tur n-off Delay Time td
Fall Time t
f
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
30 –– VVGS = 0V, ID = 250µA
DSS
DS
GS(th)
(on)
5.0 6.5 mΩ VGS = 4.5V, ID = 15AR
1.0 V VDS = VGS,ID = 250µA
30 VDS = 24V, VGS = 0
DS
Tj = 100°C
±100 nA VGS = ±12V
G
G
GS1
GS2
GD
sw
oss
G
44 60 VGS=5.0V, ID=15A, VDS=16V
38 VGS = 5.0V, VDS< 100mV
13 VDS = 16V, ID = 15A
3.0 nC
9.0
12
27 VDS = 16V, VGS = 0
1.5 Ω
15 VDD = 16V, ID = 15A
5.5 ns VGS = 5.0V
(off)
22 Clamped Inductive Load
12
iss
oss
rss
– 5500 –
– 1000 – pF VDS = 16V, VGS = 0
– 300 –
= 24V, VGS = 0,
Source-Drain Rating & Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward V
Voltage*
Reverse Recovery Q
ChargeT
Reverse Recovery Q
SD
rr
rr(s)
1.0 V IS = 15AR, VGS = 0V
120 nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
108 nC di/dt = 700A/µs
Charge (with Parallel (with 10BQ040)
Schottky)T VDS = 16V, VGS = 0V, IS = 15A
Notes:
Q Repetitive rating; pulse width limited by max. junction temperature .
R Pulse width ≤ 400 µs; duty cycle ≤ 2%.
S When mounted on 1 inch square copper board
T Typ = measured - Q
UTypical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q
measured at VGS = 5.0V , IF = 15A.
oss
OSS
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