International Rectifier IRF7811W Datasheet

HEXFET® Power MOSFET for DC-DC Converters

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Conv erters

• Low Conduction Losses

• Low Switching Losses

Description

This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.

The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
R

, gate charge and Cdv/dt-induced turn-on immunity .

DS(on)

The IRF7811W offers particulary low R
dt immunity for synchronous FET applications.

The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.

and high Cdv/

DS(on)

PD-94031A

IRF7811W

1

S

2

S

3

S

4

SO-8

DEVICE CHARACTERISTICS

IRF7811W

R

(on)

DS

Q

G

Q

sw

Q

oss

9.0mΩ
18nC

5.5nC
12nC

Top View

A

8

D

7

D

6

D

5

DG

Absolute Maximum Ratings

Parameter Symbol IRF7811W Units

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain or Source T
Current (V

≥ 4.5V) TL = 90°C 13 A

GS

= 25°C I

A

Pulsed Drain Current I
Power Dissipation T

= 25°C P

A

T

= 90°C 3.0

L

Junction & Storage Temperature Range T
Continuous Source Current (Body Diode) I
Pulsed Source Current I

DS

GS

D

DM

D

J, TSTG

S

SM

30 V

±12

14

109

3.1 W

–55 to 150 °C

3.8 A
109

Thermal Resistance

Parameter Max. Units

Maximum Junction-to-Ambient R
Maximum Junction-to-Lead R

θJA

θJL

40 °C/W
20 °C/W

3/13/01

IRF7811W

Electrical Characteristics

Parameter Min Typ Max Units Conditions

Drain-to-Source BV
Breakdown Voltage

Static Drain-Source R
on Resistance

Gate Threshold Voltage V
Drain-Source Leakage I

Current

Current* 150 µA V

Gate-Source Leakage I
Current

DSS

GSS

Total Gate Chg Cont FET Q
Total Gate Chg Sync FET Q
Pre-Vth Q

Gate-Source Charge
Post-Vth Q

Gate-Source Charge
Gate to Drain Charge Q
Switch Chg(Q

+ Qgd) Q

gs2

Output Charge Q
Gate Resistance R
Turn-on Delay Time t
Rise Time t

d (on)

r

Tur n-off Delay Time td
Fall Time t

f

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

30 – – V VGS = 0V, ID = 250µA

DSS

DS

GS(th)

(on)

9.0 12 mΩ VGS = 4.5V, ID = 15A

1.0 V VDS = VGS,ID = 250µA
30 VDS = 24V, VGS = 0

DS

Tj = 100°C

±100 nA VGS = ±12V

G

G

GS1

GS2

GD

sw

oss

G

18 24 VGS=5.0V, ID=15A, VDS=16V

15.6 VGS = 5V, VDS< 100mV

6.0 VDS = 16V, ID = 15A

1.4 nC

4.1

5.5
12 VDS = 16V, VGS = 0

2.0 Ω
11 VDD = 16V, ID = 15A
11 ns VGS = 5.0V

(off)

29 Clamped Inductive Load

9.9

iss

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rss

– 2335 –
– 400 – pF VDS = 16V, VGS = 0
– 119 –

= 24V, VGS = 0,

Source-Drain Rating & Characteristics

Parameter Min Typ Max Units Conditions

Diode Forward V
Voltage*

Reverse Recovery Q
Charge

Reverse Recovery Q

SD

rr

rr(s)

1.25 V IS = 15A, VGS = 0V

45 nC di/dt ~ 700A/µs

VDS = 16V, VGS = 0V, IS = 15A

41 nC di/dt = 700A/µs

Charge (with Parallel (with 10BQ040)
Schottky) VDS = 16V, VGS = 0V, IS = 15A

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400 µs; duty cycle ≤ 2%.
 When mounted on 1 inch square copper board
 Typ = measured - Q
 Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q

measured at VGS = 5.0V , IF = 15A.

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OSS

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