International Rectifier IRF7811AV Datasheet

• N-Channel Application-Specific MOSFETs

A

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current
applications

Description

This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.

SO-8

IRF7811AV

PD-94009

IRF7811A V

S

S

S

1

2

3

4

Top View

A

8

D

7

D

6

D

5

DG

The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including

, gate charge and Cdv/dt-induced turn-on immunity .

R

DS(on)

The IRF7811AV offers an extremely low combination of
Qsw & R
synchronous FET applications.

for reduced losses in both control and

DS(on)

The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical

DEVICE CHARACTERISTICS

IRF7811AV

R

(on)

DS

Q

G

Q

sw

Q

oss

11mΩ

17nC

6.7nC

8.1nC

PCB mount application.

Absolute Maximum Ratings

Parameter Symbol IRF7811AV Units

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain or Source T
Current (V

≥ 4.5V) TL = 90°C 11.8 A

GS

= 25°C I

A

Pulsed Drain Current I
Power Dissipation T

= 25°C P

A

T

= 90°C 3.0

L

Junction & Storage Temperature Range T
Continuous Source Current (Body Diode) I
Pulsed Source Current I

DS

GS

D

DM

D

J, TSTG

S

SM

30 V

±20

10.8

100

2.5 W

–55 to 150 °C

2.5 A
50

Thermal Resistance

Parameter Max. Units

Maximum Junction-to-Ambient R
Maximum Junction-to-Lead R

θJA
θJL

50 °C/W
20 °C/W

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IRF7811AV

Electrical Characteristics

Parameter Min Typ Max Units Conditions

Drain-to-Source BV
Breakdown Voltage

Static Drain-Source R
on Resistance

Gate Threshold Voltage V
Drain-Source Leakage I

Current

DSS

Current* 100 µA V

Gate-Source Leakage I
Current

Total Gate Chg Cont FET Q
Total Gate Chg Sync FET Q
Pre-Vth Q

Gate-Source Charge
Post-Vth Q

Gate-Source Charge
Gate to Drain Charge Q
Switch Chg(Q

+ Qgd) Q

gs2

Output Charge Q
Gate Resistance R
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time td
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Tr ansfer Capacitance C

GSS

d (on)

r

f

Source-Drain Rating & Characteristics

Parameter Min Typ Max Units Conditions

Diode Forward V
Voltage

Reverse Recovery Q
Charge

Reverse Recovery Q
Charge (with Parallel (with 10BQ040)
Schottky) VDS = 16V, VGS = 0V, IS = 15A

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400 µs; duty cycle ≤ 2%.
 When mounted on 1 inch square copper board, t < 10 sec.
 T yp = measured - Q
 Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and Q

30 – – V VGS = 0V, ID = 250µA

DSS

DS

GS(th)

(on)

11 14 mΩ VGS = 4.5V, ID = 15A

1.0 V VDS = VGS,ID = 250µA
20 VDS = 24V, VGS = 0

DS

Tj = 100°C

±100 nA VGS = ±20V

G

G

GS1

GS2

GD

sw

oss

G

17 26 VGS=5V, ID=15A, VDS=24V
14 21 VGS = 5V, VDS< 100mV

3.4 VDS = 16V, ID = 15A

1.6 nC

5.1

6.7

8.1 12 VDS = 16V, VGS = 0

2.2 Ω

8.6 VDD = 16V, ID = 15A
21 ns VGS = 5V

(off)

43 Clamped Inductive Load
10

– 1801 –

iss

– 723 – pF VDS = 16V, VGS = 0

oss

rss

SD

–46–

rr

1.3 V IS = 15A, VGS = 0V

50 nC di/dt ~ 700A/µs

VDS = 16V, VGS = 0V, IS = 15A

rr(s)

oss

43 nC di/dt = 700A/µs

= 24V, VGS = 0,

measured at VGS = 5.0V, IF = 15A.

OSS

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