International Rectifier IRF7811A, IRF7809A Datasheet

A

PD - 93810
PD - 93811

IRF7809A/IRF7811A

IRF7809A/IRF7811A

PROVISIONAL DATASHEET

• N-Channel Application-Specific MOSFETs

• Ideal for CPU Core DC-DC Converters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current
applications

Description

These new devices employ advanced HEXFET

®

Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.

Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including R
and Cdv/dt-induced turn-on immunity . The IRF7809A offers
particulary low R
synchronous FET applications. The IRF7811A offers an

and high Cdv/dt immunity for

DS(on)

extremely low combination of Qsw & R
losses in control FET applications.

, gate charge

DS(on)

for reduced

DS(on)

The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.

HEXFET® Chipset for DC-DC Converters

1

S

2

S

3

S

4

SO-8

DEVICE RATINGS

IRF7809A IRF7811A

V

DS

R

(on)

DS

Q

G

Q

sw

Q

oss

30V 28V

8.5 mΩ 12 mΩ
73 nC 23 n C

22.5 nC 7 n C
30 nC 31 n C

Top View

A

8

D

7

D

6

D

5

DG

Absolute Maximum Ratings

Parameter Symbol IRF7809A IRF7811A Units

Drain-Source Voltage V
Gate-Source V oltage V
Continuous Drain or Source T
Current (V

≥ 4.5V) TL = 90°C 14.2 11.2 A

GS

= 25°C I

A

Pulsed Drain Current I
Power Dissipation T

Junction & Storage Temperature Range T

= 25°C P

A

T

= 90°C 2.4

L

J, TSTG

Continuous Source Current (Body Diode) I
Pulsed Source Current I

DS

GS

D

DM

D

S

SM

30 28 V

±12

14.5 11.4

100 100

2.5 W

–55 to 150 °C

2.5 2.5 A
50 50

Thermal Resistance

Parameter Max. Units

Maximum Junction-to-Ambient R
Maximum Junction-to-Lead R

θJA
θJL

50 °C/W
25 °C/W

www.irf.com 1

01/19/00

IRF7809A/IRF7811A

Electrical Characteristics

IRF7809A IRF7811A

Parameter Min Typ Max Min Typ Max Units Conditions

Drain-to-Source BV
Breakdown Voltage*

Static Drain-Source R
on Resistance*

Gate Threshold Voltage* V
Drain-Source Leakage I

Current*

Current* 150 150 V

DSS

30 – – 28 – – V VGS = 0V, ID = 250µA

DSS

DS

GS(th)

(on)

7 8. 5 10 12 mΩ VGS = 4.5V, ID = 15A

1.0 1.0 V VDS = VGS,ID = 250µA
30 30 µA VDS = 24V, VGS = 0

DS

= 24V, VGS = 0,

Tj = 100°C

Gate-Source Leakage I
Current*

Total Gate Chg Cont FET* Q
Total Gate Chg Sync FET* Q
Pre-Vth Q

Gate-Source Charge
Post-Vth Q

Gate-Source Charge
Gate to Drain Charge Q
Switch Chg(Q

+ Qgd)* Q

gs2

Output Charge* Q
Gate Resistance R
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time td
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

GSS

d (on)

r

f

iss

oss

G

G

GS1

GS2

GD

sw

oss

G

(off)

– 7300 – – 1800 –
– 900 – – 900 – pF VDS = 16V, VGS = 0
– 350 – – 60 –

rss

±100 ±100 nA VGS = ±12V

61 75 19 23 VGS=5V , ID=15A, VDS=16V
55 73 17 20.5 VGS = 5V, VDS< 100mV
14 2.7 VDS = 16V, ID = 15A

3.5 1.3 nC

13.5 4.5
17 22.5 5.8 7.0
25 30 26 31 VDS = 16V, VGS = 0

1.1 1.8 Ω
19 8 VDD = 16V, ID = 15A

94nsV

GS

= 5V
32 16 Clamped Inductive Load
12 8

Source-Drain Rating & Characteristics

Parameter Min Typ Max Min Typ Max Units Conditions

Diode Forward V
Voltage*

Reverse Recovery Q
Charge

Reverse Recovery Q

SD

rr

rr(s)

Charge (with Parallel (with 10BQ040)
Schottky) VDS = 16V, VGS = 0V, IS = 15A

1.0 1.0 V IS = 15A, VGS = 0V

94 82 nC di/dt ~ 700A/µs

VDS = 16V, VGS = 0V, IS = 15A

87 74 di/dt = 700A/µs

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 300 µs; duty cycle ≤ 2%.
 When mounted on 1 inch square copper board, t < 10 sec.
 Typ = measured - Q

* Devices are 100% tested to these parameters.

oss

www.irf.com2