International Rectifier IRF7809AV Datasheet

• N-Channel Application-Specific MOSFETs

A

• Ideal for CPU Core DC-DC Conv erters

• Low Conduction Losses

• Low Switching Losses

• Minimizes Parallel MOSFETs for high current applications

Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

SO-8

PD-90010

IRF7809A V

S

1

2

3

4

Top View

A

8

D

7

D

6

D

5

DG

The IRF7809AV has been optimized for all parameters that are critical in synchronous buck conve rters including

, gate charge and Cdv/dt-induced turn-on immunity .

R

DS(on)

The IRF7809AV offers particulary low R Cdv/dt immunity for synchronous FET applications.

DS(on)

and high

The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.

DEVICE CHARACTERISTICS

IRF7809AV

R

(on)

DS

Q

G

Q

sw

Q

oss

7.0mΩ 41nC 14nC 30nC

Absolute Maximum Ratings

Parameter Symbol IRF7809A V Units

Drain-Source Voltage V Gate-Source Voltage V Continuous Drain or Source T Current (V

≥ 4.5V) TL = 90°C 14.6 A

GS

= 25°C I

A

Pulsed Drain Current I Power Dissipation T

= 25°C P

A

T

= 90°C 3.0

L

Junction & Storage Temperature Range T Continuous Source Current (Body Diode) I Pulsed Source Current I

DS

GS

D

DM

D

J, TSTG

S

SM

30 V

±12

13.3

100

2.5 W

–55 to 150 °C

2.5 A 50

Thermal Resistance

Parameter Max. Units

Maximum Junction-to-Ambient R Maximum Junction-to-Lead R

θJA

θJL

50 °C/W 20 °C/W

10/26/00

IRF7809AV

Electrical Characteristics

Parameter Min Typ Max Units Conditions

Drain-to-Source BV Breakdown Voltage

Static Drain-Source R on Resistance

Gate Threshold Voltage V Drain-Source Leakage I

Current

Current* 150 µA V

Gate-Source Leakage I Current*

DSS

GSS

Total Gate Chg Cont FET Q Total Gate Chg Sync FET Q Pre-Vth Q

Gate-Source Charge Post-Vth Q

Gate-Source Charge Gate to Drain Charge Q Switch Chg(Q

+ Qgd) Q

gs2

Output Charge* Q Gate Resistance R Turn-on Delay Time t Rise Time t

d (on)

r

Turn-off Delay Time td Fall Time t

f

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C

Source-Drain Rating & Characteristics

Parameter Min Typ Max Units Conditions

Diode Forward V Voltage*

Reverse Recovery Q Charge

Reverse Recovery Q Charge (with Parallel (with 10BQ040) Schottky) VDS = 16V, VGS = 0V, IS = 15A

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.  Pulse width ≤ 400 µs; duty cycle ≤ 2%.  When mounted on 1 inch square copper board, t < 10 sec.  Typ = measured - Q  T ypical values measured at VGS = 4.5V, IF = 15A.

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30 – – V VGS = 0V, ID = 250µA

DSS

DS

GS(th)

(on)

7.0 9.0 mΩ VGS = 4.5V, ID = 15A

1.0 V VDS = VGS,ID = 250µA 30 VDS = 24V, VGS = 0

DS

Tj = 100°C

±100 nA VGS = ±12V

G

GS1

GS2

GD

sw

oss

G

41 62 VGS=5V, ID=15A, VDS=20V 36 54 VGS = 5V, VDS< 100mV

7.0 VDS = 20V, ID = 15A

2.3 nC

12 ID=15A, VDS=16V 14 21 30 45 VDS = 16V, VGS = 0

1.5 Ω 14 VDD = 16V, ID = 15A 36 ns VGS = 5V

(off)

96 Clamped Inductive Load 10

iss

oss

rss

SD

– 3780 – – 1060 – pF VDS = 16V, VGS = 0 – 130 –

1.3 V IS = 15A, VGS = 0V

rr

120 nC di/dt ~ 700A/µs

VDS = 16V, VGS = 0V, IS = 15A

rr(s)

oss

150 nC di/dt = 700A/µs

= 24V, VGS = 0,

IRF7809AV

1000

100

D

I , Drain-to-Source Current (A)

10

0.1 1 10 100

1000

VGS

TOP

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM

2.5V

20µs PULSE WIDTH T = 25 C

J

V , Drain-to-Source Voltage (V)

DS

°

1000

100

D

I , Drain-to-Source Current (A)

10

0.1 1 10 100

VGS

TOP

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM

2.5V

20µs PULSE WIDTH T = 150 C

J

V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

15A

I =

D

1.5

100

D

I , Drain-to-Source Current (A)

10

2.4 2.6 2.8 3.0 3.2 3.4

°

T = 150 C

J

°

T = 25 C

J

V = 15V

DS

20µs PULSE WIDTH

V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

10V

GS

°

Vs. Temperature

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