INTERNATIONAL RECTIFIER IRF 7759 Datasheet

PD - 96283

IRF7759L2TRPbF

IRF7759L2TR1PbF

l RoHS Compliant, Halogen Free 
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter

Primary Switch Socket

l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity

DirectFET Power MOSFET 

Typical values (unless otherwise specified)

V

DSS

75V min ±20V max

Q

g tot

200nC 62nC 3.0V

V

Q

GS

gd

R

DS(on)

1.8mΩ@ 10V

V

gs(th)

l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
l Industrial Qualified

Applicable DirectFET Outline and Substrate Outline 

D

G

S

S

S

S S

L8

S

S

D

S

DirectFET ISOMETRIC

SB SC M2 M4 L4 L6 L8

Description

The IRF7759L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to

achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package
is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems.

The IRF7759L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system
reliability improvements, and makes this device ideal for high performance power converters.

Absolute Maximum Ratings

Parameter Units

V

DS

V

GS

I

@ TC = 25°C

D

ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
I

DM

E

AS

I

AR

)

8

Ω

m

(
e

c
n
a

t
s

6

i
s
e

R
n
O
e

c

4

r
u
o
S

­o

t

­n

i
a

2

r
D
,

)
n
o
(
S
D

0

R

Fig 1. Typical On-Resistance vs. Gate Voltage

Notes:

2 4 6 8 10 12 14 16 18 20

Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V

Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current

V

Gate -to -Source Voltage (V)

GS,

g

TJ = 125°C

TJ = 25°C

g

ID = 96A

@ 10V

GS

@ 10V

GS

@ 10V

GS

@ 10V

GS

h

 Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET Website.
 Surface mounted on 1 in. square Cu board, steady state.

(Silicon Limited)

(Silicon Limited)

(Silicon Limited)

(Package Limited)

 T

f
f
e

C

 Repetitive rating; pulse width limited by max. junction temperature.
 Starting T

f

1.95

)
Ω

m

(

R
l

a
c

i
p
y
T

TA= 25°C

1.85

)
n
o

(
S
D

1.75

1.65

15 30 45 60 75 90 105

Fig 2. Typical On-Resistance vs. Drain Current

measured with thermocouple mounted to top (Drain) of part.

= 25°C, L = 0.056mH, RG = 25Ω, I

J

Max.

75

±20

160
113

26
375
640
257

96

VGS = 7.0V

VGS = 8.0V

VGS = 10V

VGS = 15V

ID, Drain Current (A)

AS

V

A

mJ

A

= 96A.

www.irf.com 1

11/16/09

IRF7759L2TR/TR1PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

V

/∆T

∆Β

DSS

R

DS(on)

V

GS(th)

∆V

/∆T

GS(th)

I

DSS

I

GSS

gfs Forward Transconductance 74 ––– ––– S
Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

R

G

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

C

oss

C

oss

Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-to-Source Breakdown Voltage 75 ––– ––– V

Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C

J

Static Drain-to-Source On-Resistance ––– 1.8 2.3

Gate Threshold Voltage 2.0 3.0 4.0 V

Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C

J

Drain-to-Source Leakage Current ––– ––– 20

––– ––– 250

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

Total Gate Charge ––– 200 300

Pre-Vth Gate-to-Source Charge ––– 37 –––

Post-Vth Gate-to-Source Charge ––– 11 –––

Gate-to-Drain Charge ––– 62 93

Gate Charge Overdrive ––– 91 ––– See Fig. 9
Switch Charge (Q

gs2

+ Qgd)

––– 73 –––

Output Charge ––– 60 ––– nC

Gate Resistance ––– 1.1 ––– Ω

Turn-On Delay Time ––– 18 –––

Rise Time ––– 37 –––

Turn-Off Delay Time ––– 80 –––

Fall Time ––– 33 –––

Input Capacitance ––– 12222 –––

Output Capacitance ––– 1465 –––

Reverse Transfer Capacitance ––– 609 –––

Output Capacitance ––– 7457 –––

Output Capacitance ––– 955 –––

Parameter Min. Typ. Max. Units

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

g

Diode Forward Voltage ––– ––– 1.3 V

Reverse Recovery Time ––– 64 96 ns

Reverse Recovery Charge ––– 150 225 nC

––– ––– 160

––– ––– 640

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, I

V

mΩ

µA

nA

nC

ns

= 10V, ID = 96A

GS

= VGS, ID = 250µA

V

DS

= 75V, VGS = 0V

V

DS

VDS = 60V, VGS = 0V, TJ = 125°C

VGS = 20V

V

= -20V

GS

V

= 25V, ID = 96A

DS

V

= 38V

DS

= 10V

V

GS

I

= 96A

D

= 16V, VGS = 0V

V

DS

V

= 38V, VGS = 10V

DD

I

= 96A

D

R

=1.8Ω

G

= 0V

V

GS

VDS = 25V

pF

ƒ = 1.0MHz

= 0V, VDS = 1.0V, f=1.0MHz

V

GS

VGS = 0V, VDS = 60V, f=1.0MHz

Conditions

MOSFET symbol

showing the

A

integral reverse

p-n junction diode.

= 25°C, IS = 96A, VGS = 0V

T

J

TJ = 25°C, IF = 96A, VDD = 38V

di/dt = 100A/µs

i

= 2mA

D

i

i

i

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400µs; duty cycle ≤ 2%.

2 www.irf.com

τ

Absolute Maximum Ratings

PD @TC = 25°C
PD @TC = 100°C Power Dissipation
PD @TA = 25°C
T

P

T

J

T

STG

Power Dissipation

Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range

Thermal Resistance

R
R
R
R
R

θJA

θJA

θJA

θJ-Can

θJ-PCB

10

W

/

1

C
°

)

C
J
h

t

0.1

Z
(

e
s
n
o
p

0.01

s
e

R
l
a

m

r
e

0.001

h
T

0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1

Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can

fl

Junction-to-PCB Mounted ––– 0.5

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE
( THERMAL RESPONSE )

IRF7759L2TR/TR1PbF

Parameter Units

f
f
c

Parameter Typ. Max. Units

e

j
k

R

R

1

2

R

R

1

τ

J

τ

J

τ

1

τ

1

Ci= τi/Ri

2

τ

2

τ

2

t1 , Rectangular Pulse Duration (sec)

––– 45

12.5 –––

––– 1.2

R

R

3

R

3

τ

τ

3

4

τ

3

Max.

125

63

3.3

270

-55 to + 175

20 ––– °C/W

Ri (°C/W) τi (sec)

4

R

4

0.10804 0.000171

τ

C

0.61403 0.053914

τ

4

0.45202 0.006099

0.00001 0.036168

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

W

°C

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case 

Notes:

 Surface mounted on 1 in. square Cu board, steady state.
 T

measured with thermocouple incontact with top (Drain) of part.

C

 Used double sided cooling, mounting pad with large heatsink.

 Surface mounted on 1 in. square Cu
board (still air).

www.irf.com 3

 Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)

 Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

 R

is measured at T

θ

of approximately 90°C.

J

IRF7759L2TR/TR1PbF

1000

TOP 15V

)

100

A

(
t
n
e

r

r
u

10

C
e

c

r
u
o
S

-

1

o

t

­n

i
a

r
D

,

0.1

D

I

60µs

≤

3.75V

PULSE WIDTH

BOTTOM 3.75V

Tj = 25°C

0.01

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 4. Typical Output Characteristics

1000

V

= 25V

DS

≤

)
A

(
t

100

n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

D

I

60µs PULSE WIDTH

10

1

TJ = 175°C

TJ = 25°C
TJ = -40°C

0.1
2 2.5 3 3.5 4 4.5 5 5.5 6

VGS, Gate-to-Source Voltage (V)

Fig 6. Typical Transfer Characteristics

VGS

10V

7.00V

5.50V

5.00V

4.50V

4.00V

1000

VGS

10V

7.00V

5.50V

5.00V

4.50V

4.00V

60µs

≤

3.75V

PULSE WIDTH

)
A

(
t
n
e

r

r
u

C
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,
I

TOP 15V

100

BOTTOM 3.75V

10

D

Tj = 175°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Output Characteristics

2.5

e
c
n
a

t
s

i
s
e

R
n
O
e

c

r
u
o
S

­o

t

­n

i
a

r
D

,

)
n
o

(
S
D

R

ID = 96A

V

= 10V

GS

2.0

)
d
e
z

i

l

1.5

a
m

r
o

N

(

1.0

0.5

-60 -20 20 60 100 140 180

TJ , Junction Temperature (°C)

Fig 7. Normalized On-Resistance vs. Temperature

100000

)
F

10000

p

(
e

c
n
a

t

i
c
a
p
a

C

1000

,
C

V

= 0V, f = 1 MHZ

GS

C

= C

iss

rss

oss

= C

= C

gs

gd

ds

C

C

C

C

C

+ Cgd, C

+ C

iss

oss

rss

SHORTED

ds

gd

100

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

14

ID= 96A

12

)
V

(
e

g

10

a

t

l
o
V

e

8

c

r
u
o
S

-

6

o

t

­e

t
a

4

G
,

S
G

V

2

VDS= 60V

VDS= 38V

VDS= 15V

0

0 50 100 150 200 250 300

QG, Total Gate Charge (nC)

Fig 9. Typical Total Gate Charge vs

Gate-to-Source Voltage

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