International Rectifier IRF7757 Datasheet
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
l Common Drain Configuration
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for,
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
provides the de-
PD - 94174
IRF7757
HEXFET® Power MOSFET
V
DSS
R
DS(on)
max (m
20V 35@VGS = 4.5V 4.8A
40@VGS = 2.5V 3.8A
8 = D
7 = D
6 = D
5 = D
8
7
6
5
1
2
3
4
1 = S1
2 = G1
3 = S2
4 = G2
Ω)Ω)
Ω) I
Ω)Ω)
TSSOP-8
D
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.8
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 3.9 A
I
DM
PD @TA = 25°C Power Dissipation 1.2
PD @TA = 70°C Power Dissipation 0.76
V
GS
T
J, TSTG
Drain- Source Voltage 20 V
Pulsed Drain Current 19
W
Linear Derating Factor 9.5 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 105 °C/W
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IRF7757
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.013 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 35 VGS = 4.5V, ID = 4.8A
––– ––– 40 VGS = 2.5V, ID = 3.8A
mΩ
Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, ID = 250µA
Forward Transconductance 11 ––– ––– SVDS = 10V, ID = 4.8A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
µA
nA
GS
= 12V
Total Gate Charge ––– 15 23 ID = 4.8A
Gate-to-Source Charge ––– 2.5 ––– nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 4.8 ––– VGS = 4.5V
Turn-On Delay Time ––– 9.5 ––– VDD = 10V
Rise Time ––– 9.2 ––– ID = 1.0A
Turn-Off Delay Time ––– 36 ––– RG = 6.2Ω
ns
Fall Time ––– 14 ––– VGS = 4.5V
Input Capacitance ––– 1340 ––– VGS = 0V
Output Capacitance ––– 180 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 132 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
1.2
19
A
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.2A, VGS = 0V
Reverse Recovery Time ––– 20 30 ns TJ = 25°C, IF = 1.2A
Reverse Recovery Charge ––– 10 15 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
IRF7757
1000
100
10
1
, Drain-to-Source Current (A)
D
I
VGS
TOP 7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.00
100
10
, Drain-to-Source Current (A)
D
I
VGS
TOP 7.5V
5.0V
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
20µs PULSE WIDTH
1
0.1 1 10 100
Tj = 150°C
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
4.8A
I =
D
)
(Α
1.5
TJ = 150°C
10.00
1.0
(Normalized)
, Drain-to-Source Current
D
I
1.00
TJ = 25°C
V
= 15V
DS
20µs PULSE WIDTH
1.5 2.0 2.5 3.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
4.5V
GS
°
Vs. Temperature
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