International Rectifier IRF7755 Datasheet

l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel

Description

HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex­tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter­national Rectifier is well known for,

with an extremely efficient and reliable device for
battery and load management.

The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.

provides thedesigner

PD -93995A

IRF7755

HEXFET® Power MOSFET

V

DSS

-20V 51mΩ@VGS = -4.5V -3.7A

1
2
3
4

1 = D1
2 = S1
3 = S1
4 = G1

R

max I

DS(on)

86mΩ@VGS = -2.5V -2.8A

8
7
6
5

8 = D2
7 = S2
6 = S2
5 = G2

TSSOP-8

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.9
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.1 A
I

DM

PD @TA = 25°C Maximum Power Dissipation 1W
P

= 70°C Maximum Power Dissipation 0.64 W

D @TA

Linear Derating Factor 0.01 W/°C

V

GS

TJ , T

STG

Drain-Source Voltage -20 V

Pulsed Drain Current -15

Gate-to-Source Voltage ±20 V

Junction and Storage Temperature Range -55 to +150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 125 °C/W

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4/9/01

IRF7755

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 –– – –– – V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– 35.3 51 VGS = -4.5V, ID = -3.7A 
––– 44.3 86 VGS = -2.5V, ID = -2.8A 

mΩ

Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 7.0 ––– ––– S VDS = -10V, ID = -3.7A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 12V

––– ––– -15 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 11 17 ID = -3.7A
Gate-to-Source Charge ––– 2.1 ––– nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 3.5 ––– VGS = -4.5V
Turn-On Delay Time ––– 9 14 VDD = -10V, VGS = -4.5V
Rise Time ––– 13 20 ID = -1.0A
Turn-Off Delay Time ––– 89 133 RG = 6.0Ω

ns

Fall Time ––– 61 92 RD = 10Ω 
Input Capacitance ––– 1090 ––– VGS = 0V
Output Capacitance ––– 18 2 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 124 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– –––

–––

–––

-1.0

-15

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V 
Reverse Recovery Time ––– 55 82 ns TJ = 25°C, IF = -1.0A
Reverse Recovery Charge ––– 29 43 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t < 10sec.

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

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D

S

IRF7755

100

10

1

, Drain-to-Source Current (A)

D

-I

-1.5V

20µs PULSE WIDTH
Tj = 25°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP -7.5V

-4.5V

-3.5V

-3.0V

-2.5V

-2.0V

-1.75V
BOTTOM -1.5V

100

10

1

, Drain-to-Source Current (A)

D

-I

-1.5V

20µs PULSE WIDTH
Tj = 150°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

-3.9A

I =

D

VGS

TOP -7.5V

-4.5V

-3.5V

-3.0V

-2.5V

-2.0V

-1.75V
BOTTOM -1.5V

1.5

10

°

T = 150 C

J

°

T = 25 C

1

D

-I , Drain-to-Source Current (A)

0.1

1.0 1.5 2.0 2.5 3.0

-V , Gate-to-Source Voltage (V)

GS

J

V = -15V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-4.5V

Vs. Temperature

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