International Rectifier IRF7751 Datasheet

l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel

Description

HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex­tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter­national Rectifier is well known for,

signer with an extremely efficient and reliable device
for use in battery and load management.

The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.

provides the de-

PD - 94002

IRF7751

HEXFET® Power MOSFET

V

DSS

-30V 35mΩ@VGS = -10V -4.5A

1
2
3
4

1 = D1
2 = S1
3 = S1
4 = G1

R

DS(on)

max I

55mΩ@VGS = -4.5V -3.8A

8
7
6
5

8 = D2
7 = S2
6 = S2
5 = G2

TSSOP-8

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -4.5
ID @ TC = 70°C Continuous Drain Current, VGS @ -10V -3.6 A
I

DM

PD @TC = 25°C Power Dissipation  1.0
PD @TC = 70°C Power Dissipation  0.64

V

GS

T

J, TSTG

Drain-Source Voltage -30 V

Pulsed Drain Current  -18

W

Linear Derating Factor 0.008 W/°C
Gate-to-Source Voltage ±20 V
Junction and Storage Temperature Range -55 to +150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 125 °C/W

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10/04/2000

IRF7751

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.020 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 35 VGS = -10V, ID = -4.5A 
––– ––– 55 VGS = -4.5V, ID = -3.8A 

mΩ

Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
Forward Transconductance 6.8 ––– –– – S VDS = -10V, ID = -4.5A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -15 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 29 44 ID = -4.5A
Gate-to-Source Charge ––– 5.5 ––– nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 5.0 ––– VGS = -10V
Turn-On Delay Time ––– 13 20 VDD = -15V
Rise Time ––– 16 24 ID = -1.0A
Turn-Off Delay Time ––– 155 233 RG = 6.0Ω

ns

Fall Time ––– 80 120 VGS = -10V
Input Capacitance ––– 1464 ––– VGS = 0V
Output Capacitance ––– 227 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 146 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

-1.0

––– ––– -18

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V 
Reverse Recovery Time ––– 23 35 ns TJ = 25°C, IF = -1.0A
Reverse RecoveryCharge ––– 19 28 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t < 10 sec.

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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D

S

IRF7751

100

10

1

-2.7V

0.1

, Drain-to-Source Current (A)

D

-I

20µs PULSE WIDTH
Tj = 25°C

0.01

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP -10.0V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

-3.0V
BOTTOM -2.7V

100

10

-2.7V

1

, Drain-to-Source Current (A)

D

-I

20µs PULSE WIDTH
Tj = 150°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

-4.5A

I =

D

VGS

TOP -10.0V

-7.0V

-5.5V

-4.5V

-4.0V

-3.5V

-3.0V
BOTTOM -2.7V

1.5

°

10

D

-I , Drain-to-Source Current (A)

0.1

T = 150 C

J

°

T = 25 C

J

1

V = -15V

DS

20µs PULSE WIDTH

2.0 3.0 4.0 5.0 6.0

-V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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