International Rectifier IRF7750 Datasheet

PD - 93848A

IRF7750

HEXFET® Power MOSFET

l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel

TSSOP-8

Description

HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier
is well known for,

management.

The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into
extremely thin environments such as portable electronics and PCMCIA cards.

provides the designer with an extremely efficient and reliable device for battery and load

R

DS(on)

V

DSS

= -20V

= 0.030Ω

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V ±4.7
ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V ±3.8 A
I

DM

PD @TC = 25°C Power Dissipation 1.0
PD @TC = 70°C Power Dissipation 0.64

V

GS

T

J, TSTG

Drain- Source Voltage -20 V

Pulsed Drain Current  ±38

W

Linear Derating Factor 0.008 W/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 125 °C/W

www.irf.com 1

5/25/2000

IRF7750

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.012 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.030 VGS = -4.5V, ID = -4.7A 
––– ––– 0.055 VGS = -2.5V, ID = -3.8A 

Ω

Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 11 ––– ––– S VDS = -10V, ID = -4.7A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -20V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge – – – 2 6 39 ID = -4.7A
Gate-to-Source Charge ––– 3.9 5.8 nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 8.0 12 VGS = -5.0V
Turn-On Delay Time ––– 15 ––– VDD = -10V
Rise Time ––– 54 ––– ID = -1.0A
Turn-Off Delay Time ––– 180 ––– RD = 10Ω

ns

Fall Time ––– 210 ––– RG = 24Ω 
Input Capacitance ––– 1700 ––– VGS = 0V
Output Capacitance ––– 380 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

-1.0

––– ––– -38

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V 
Reverse Recovery Time ––– 26 39 ns TJ = 25°C, IF = -1.0A
Reverse RecoveryCharge ––– 16 24 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t<10 sec

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

2 www.irf.com

D

S

IRF7750

1000

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

BOTTOM

-1.50V

-1.50V

20µs PULSE WIDTH
T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100

1000

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

BOTTOM

-1.50V

-1.50V

20µs PULSE WIDTH
T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics

100

°

T = 25 C

J

T = 150 C

J

10

D

-I , Drain-to-Source Current (A)

V = -15V

DS

1

1.5 2.0 2.5 3.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

°

10

°

T = 150 C

J

1

SD

-I , Reverse Drain Current (A)

0.1

0.2 0.4 0.6 0.8 1.0 1.2

-V ,Source-to-Drain Voltage (V)

SD

°

T = 25 C

J

V = 0 V

GS

Fig 4. Typical Source-Drain Diode

Forward Voltage

www.irf.com 3