International Rectifier IRF7726 Datasheet

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel

Description

HEXFET
fier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the ruggedized device design,
that International Rectifier is well known for, provides
the designer with an extremely efficient and reliable
device for battery and load management.

®

Power MOSFETs from International Recti-

PD -94064

IRF7726

HEXFET® Power MOSFET

V

DSS

-30V 0.026@VGS = -10V -7.0A

1

S

2

S

3

S

4

R

max I

DS(on)

0.040@VGS = -4.5V -6.0A

A

8

D

7

D

6

D

5

DG

D

The new Micro8 package, with half the footprint area

Top V iew

MICRO-8

of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit
board space is at a premium. The low profile (<1.2mm)
of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -7.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -5.7 A
I

DM

PD @TA = 25°C Maximum Power Dissipation 1.79 W
PD @TA = 70°C Maximum Power Dissipation 1.14 W

Linear Derating Factor 0.01 W/°C

V

GS

TJ , T

STG

Drain-Source Voltage -30 V

Pulsed Drain Current -28

Gate-to-Source Voltage ±20 V

Junction and Storage Temperature Range -55 to +150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 70 °C/W

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12/21/00

IRF7726

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -30 ––– ––– VVGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.016 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.026 VGS = -10V, ID = -7.0A 
––– ––– 0.040 VGS = -4.5V, ID = -6.0A 

Ω

Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA
Forward Transconductance 10 ––– ––– SVDS = -10V, ID = -7.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -15 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 46 69 ID = -7.0A
Gate-to-Source Charge ––– 8.0 ––– nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 8.1 ––– VGS = -10V
Turn-On Delay Time ––– 15 23 VDD = -15V, VGS = -10V
Rise Time ––– 25 38 ID = -1.0A
Turn-Off Delay Time ––– 227 341 RG = 6.0Ω

ns

Fall Time ––– 107 161 RD = 15Ω 
Input Capacitance ––– 2204 ––– VGS = 0V
Output Capacitance ––– 341 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 220 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– –––

–––

–––

-1.8

-28

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.8A, VGS = 0V 
Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = -1.8A
Reverse Recovery Charge ––– 32 48 µC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t < 10 sec.

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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D

S

IRF7726

100

10

1

-2.5V

0.1

, Drain-to-Source Current (A)

D

-I

20µs PULSE WIDTH
Tj = 25°C

0.01

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V
BOTTOM -2.5V

100

10

-2.5V

1

, Drain-to-Source Current (A)

D

-I

20µs PULSE WIDTH
Tj = 150°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

-7.0A

I =



D

VGS

TOP -10.0V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V
BOTTOM -2.5V

°

T = 150 C



J

10

°

T = 25 C



1

D

-I , Drain-to-Source Current (A)

0.1

2.0 3.0 4.0 5.0 6.0

J

V = -15V

DS



20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

GS

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J



Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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