International Rectifier IRF7707 Datasheet

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel

Description

HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex­tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter­national Rectifier is well known for,

with an extremely efficient and reliable device for
battery and load management.

The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.

provides thedesigner

PD -93996

IRF7707

HEXFET® Power MOSFET

V

DSS

-20V 22mΩ@VGS = -4.5V -7.0A

1
2
3

G

4

1 = D
2 = S
3 = S
4 = G

R

max I

DS(on)

33mΩ@VGS = -2.5V -6.0A

8

D

7
6

S

5

8 = D
7 = S
6 = S
5 = D

TSSOP-8

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -7.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -5.7 A
I

DM

PD @TA = 25°C Maximum Power Dissipation 1.5 W
PD @TA = 70°C Maximum Power Dissipation 1.0 W

Linear Derating Factor 0.01 W/°C

V

GS

TJ , T

STG

Drain-Source Voltage -20 V

Pulsed Drain Current -28

Gate-to-Source Voltage ±12 V

Junction and Storage Temperature Range -55 to +150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 83 °C/W

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IRF7707

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 –– – –– – V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.012 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– 14.3 22 VGS = -4.5V, ID = -7.0A 
––– 18.9 33 VGS = -2.5V, ID = -6.0A 

mΩ

Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 15 ––– ––– S VDS = -10V, ID = -7.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 31 47 ID = -7.0A
Gate-to-Source Charge ––– 6.4 ––– nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 10 ––– VGS = -4.5V
Turn-On Delay Time ––– 11 17 VDD = -10V
Rise Time ––– 54 81 ID = -1.0A
Turn-Off Delay Time ––– 134 201 RG = 6.0Ω

ns

Fall Time ––– 138 207 VGS = -4.5V 
Input Capacitance ––– 2361 ––– VGS = 0V
Output Capacitance ––– 5 12 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 323 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– –––

–––

–––

-1.5

-28

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V 
Reverse Recovery Time ––– 142 213 ns TJ = 25°C, IF = -1.5A
Reverse Recovery Charge ––– 147 221 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t < 10sec.

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

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D

S

IRF7707

100

10

1

, Drain-to-Source Current (A)

D

-I

-1.5V

20µs PULSE WIDTH
Tj = 25°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

100

VGS

TOP -7.5V

-4.5V

-3.5V

-3.0V

-2.5V

-2.0V

-1.75V
BOTTOM -1.5V

100

10

-1.5V

1

, Drain-to-Source Current (A)

D

-I

20µs PULSE WIDTH
Tj = 150°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

-7.0A

I =

D

VGS

TOP -7.5V

-4.5V

-3.5V

-3.0V

-2.5V

-2.0V

-1.75V
BOTTOM -1.5V

1.5

°

T = 150 C

J

10

°

T = 25 C

J

D

-I , Drain-to-Source Current (A)

V = -15V

DS

1

1.0 1.5 2.0 2.5 3.0 3.5 4.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-4.5V

Vs. Temperature

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