International Rectifier IRF7704 Datasheet

PD- 94160

IRF7704

HEXFET® Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel

Description

HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex­tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter­national Rectifier is well known for,

with an extremely efficient and reliable device for
battery and load management.

The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.

provides thedesigner

V

DSS

R

DS(on)

max (m

Ω)Ω)

Ω) I

Ω)Ω)

-40V 46@VGS = -10V -4.6A
74@VGS = -4.5V -3.7A

1
2
3
4

1 = D
2 = S
3 = S
4 = G

G

8

D

7
6

S

5

8 = D
7 = S
6 = S
5 = D

TSSOP-8

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -4.6
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -3.7 A
I

DM

PD @TA = 25°C Power Dissipation  1.5
PD @TA = 70°C Power Dissipation  1.0

V

GS

T

J, TSTG

Drain- Source Voltage -40 V

Pulsed Drain Current  -19

W

Linear Derating Factor 12 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 83 °C/W

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3/19/01

IRF7704

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -40 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 46 VGS = -10V, ID = -4.6A 
––– ––– 74 VGS = -4.5V, ID = -3.7A 

mΩ

Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
Forward Transconductance 7.2 ––– ––– S VDS = -10V, ID = -4.6A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -10 VDS = -32V, VGS = 0V
––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 25 38 ID = -4.6A
Gate-to-Source Charge ––– 10 15 nC VDS = -15V
Gate-to-Drain ("Miller") Charge ––– 9.5 14 VGS = -4.5V
Turn-On Delay Time ––– 25 ––– VDD = -20V 
Rise Time ––– 360 ––– ID = -1.0A
Turn-Off Delay Time ––– 190 ––– RG = 6.0Ω

ns

Fall Time ––– 100 ––– VGS = -4.5V
Input Capacitance ––– 3150 ––– VGS = 0V
Output Capacitance – –– 250 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 20 0 ––– ƒ = 1.0kHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

–––

–––

-1.5

-19

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V 
Reverse Recovery Time ––– 29 44 ns TJ = 25°C, IF = -1.5A
Reverse Recovery Charge ––– 41 62 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on 1 in square Cu board

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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D

S

IRF7704

1000

100

10

1

0.1

D

-I , Drain-to-Source Current (A)

0.01

0.1 1 10 100

VGS

TOP

-15V

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

BOTTOM

-2.7V

-2.70V

20µs PULSE WIDTH
T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100.0

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-15V

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

BOTTOM

-2.7V

-2.70V

20µs PULSE WIDTH
T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics

2.0

I =

D

4.6A

)

(Α

10.0

TJ = 150°C

1.0

TJ = 25°C

0.1

, Drain-to-Source Current

D

-I

0.0

2.5 3.0 3.5 4.0 4.5 5.0

-VGS, Gate-to-Source Voltage (V)

V

= -25V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

-10V

GS

°

Vs. Temperature

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