International Rectifier IRF7703 Datasheet

PD - 94221

IRF7703

HEXFET® Power MOSFET

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel

Description

HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex­tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter­national Rectifier is well known for,

signer with an extremely efficient and reliable device
for battery and load management.

The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.

provides the de-

V

DSS

R

DS(on)

max (m

Ω)Ω)

Ω) I

Ω)Ω)

-40V 28@VGS = -10V -6.0A
45@VGS = -4.5V -4.8A

1
2
3
4

1 = D
2 = S
3 = S
4 = G

G

8

D

7
6

S

5

8 = D
7 = S
6 = S
5 = D

TSSOP-8

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -6.0
ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -4.7 A
I

DM

PD @TA = 25°C Power Dissipation  1.5
PD @TA = 70°C Power Dissipation  0.96

V

GS

T

J, TSTG

Drain- Source Voltage -40 V

Pulsed Drain Current  -24

W

Linear Derating Factor 0.012 W/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 83 °C/W

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05/11/01

IRF7703

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -40 ––– ––– VVGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.030 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 28 VGS = -10V, ID = -6.0A 
––– ––– 45 V

mΩ

= -4.5V, ID = -4.8A 

GS

Gate Threshold Voltage -1.0 ––– -3.0 V VDS = VGS, ID = -250µA
Forward Transconductance 10 ––– ––– SVDS = -10V, ID = -6.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V

––– ––– -15 VDS = -32V, VGS = 0V
––– ––– -25 VDS = -32V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 41 62 ID = -6.0A
Gate-to-Source Charge ––– 16 25 nC VDS = -20V
Gate-to-Drain ("Miller") Charge ––– 16 24 VGS = -10V
Turn-On Delay Time ––– 43 ––– VDD = -20V 
Rise Time ––– 405 ––– ID = -1.0A
Turn-Off Delay Time ––– 155 ––– RG = 6.0Ω

ns

Fall Time ––– 77 ––– VGS = -10V
Input Capacitance ––– 5220 ––– VGS = 0V
Output Capacitance ––– 416 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 337 ––– ƒ = 1.0kHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

–––

–––

-1.5

-24

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V 
Reverse Recovery Time ––– 34 51 ns TJ = 25°C, IF = -1.5A
Reverse Recovery Charge ––– 56 84 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on 1 in square Cu board

max. junction temperature.

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

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D

S

IRF7703

10000

1000

100

10

1

0.1

, Drain-to-Source Current (A)

D

-I

0.01

VGS

TOP -15V

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V
BOTTOM -2.7V

-2.7V

20µs PULSE WIDTH
Tj = 25°C

0.001

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

100

1000

100

10

1

, Drain-to-Source Current (A)

D

-I

VGS

TOP -15V

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V
BOTTOM -2.7V

-2.7V

20µs PULSE WIDTH
Tj = 150°C

0.1

0.1 1 10 100

-VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

-6.0A

I =



D

J

°

T = 25 C



J

1.5

°

1.0

10

T = 150 C



1

(Normalized)

0.1

D

-I , Drain-to-Source Current (A)

V = -15V

DS



0.01

2.0 2.5 3.0 3.5 4.0 4.5 5.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J



Fig 4. Normalized On-Resistance

V =

GS

°

-10V

Vs. Temperature

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