International Rectifier IRF7702 Datasheet

PD - 93849C

PROVISIONAL

IRF7702

HEXFET® Power MOSFET

l Ultra Low On-Resistance
l -1.8V Rated
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.1mm)
l Available in Tape & Reel

Description

HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex­tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter­national Rectifier is well known for,

provides thedesigner
with an extremely efficient and reliable device for
battery and load management.

The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V ±8.0
ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V ±7.0 A
I

DM

PD @TC = 25°C Power Dissipation 1.5
PD @TC = 70°C Power Dissipation 0.96

V

GS

T

J, TSTG

Drain- Source Voltage -12 V

Pulsed Drain Current  ±70

Linear Derating Factor 0.01 W/°C
Gate-to-Source Voltage ± 8.0 V
Junction and Storage Temperature Range -55 to + 150 °C

V

DSS

R

DS(on)

max I

0.014@VGS = -4.5V -8.0A

-12V 0.019@VGS = -2.5V -7.0A

0.027@VGS = -1.8V -5.8A

1
2
3
4

1 = D
2 = S
3 = S
4 = G

G

8

D

7
6

S

5

8 = D
7 = S
6 = S
5 = D

TSSOP-8

D

W

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 83 °C/W

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6/19/00

IRF7702

PROVISIONAL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA

J

––– ––– 0.014 VGS = -4.5V, ID = -8.0A 

Static Drain-to-Source On-Resistance – – – ––– 0.019 VGS = -2.5V, ID = -7.0A 

Ω

––– ––– 0.027 VGS = -1.8V, ID = -5.8A 
Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 26 ––– ––– S VDS = -10V, ID = -8.0A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V
Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 8.0V

––– ––– 1.0 VDS = -12V, VGS = 0V

––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 54 81 ID = -8.0A
Gate-to-Source Charge ––– 7.8 12 nC VDS = -9.6V
Gate-to-Drain ("Miller") Charge ––– 15 23 VGS = -4.5V
Turn-On Delay Time ––– 16 ––– VDD = -6.0V
Rise Time ––– 21 ––– ID = -1.0A

ns

Turn-Off Delay Time ––– 320 –– – RD = 6.0Ω
Fall Time ––– 250 ––– RG = 6.0Ω 
Input Capacitance ––– 3470 ––– VGS = 0V
Output Capacitance –– – 1040 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 670 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

-1.5

––– ––– -70

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V 
Reverse Recovery Time ––– 58 87 n s TJ = 25°C, IF = -1.5A
Reverse RecoveryCharge ––– 41 62 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t<10 sec

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

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D

S

PROVISIONAL

IRF7702

1000

100

10

TOP

BOTTOM

VGS

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

-1.50V

-1.50V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

1000

1000

100

10

D

-I , Drain-to-Source Current (A)

TOP

BOTTOM

VGS

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

-1.50V

-1.50V

20µs PULSE WIDTH
T = 150 C

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output Characteristics

100.00
TJ = 25°C

°

TJ = 150°C

100

°

T = 150 C

J

10.00

, Reverse Drain Current (A)

D

-I , Drain-to-Source Current (A)

10

1.5 2.0 2.5 3.0 3.5

-V , Gate-to-Source Voltage (V)

GS

°

T = 25 C

J

V = -15V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

SD

-I

V

= 0V

GS

1.00

0.0 1.0 2.0 3.0 4.0 5.0 6.0

-VSD, Source-toDrain Voltage (V)

Fig 4. Typical Source-Drain Diode

Forward Voltage

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