International Rectifier IRF7701 Datasheet

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel

Description

HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex­tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter­national Rectifier is well known for,

with an extremely efficient and reliable device for use
in battery and load management.

The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such

as portable electronics and PCMCIA cards.

provides thedesigner

IRF7701

HEXFET® Power MOSFET

V

DSS

-12V 0.015@VGS = -2.5V -8.5A

1
2
3

G

4

1 = D
2 = S
3 = S
4 = G

R

max I

DS(on)

0.011@VGS = -4.5V -10A

0.022@VGS = -1.8V -7.0A

8

D

7
6

S

5

8 = D
7 = S
6 = S
5 = D

TSSOP-8

PD - 93940

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±10
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V ±8.0 A
I

DM

PD @TA = 25°C Power Dissipation 1.5
PD @TA = 70°C Power Dissipation 0.96

V

GS

T

J, TSTG

Drain- Source Voltage -12 V

Pulsed Drain Current  ±80

W

Linear Derating Factor 12 mW/°C
Gate-to-Source Voltage ± 8.0 V
Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 83 °C/W

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IRF7701

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.006 –– – V/°C Reference to 25°C, ID = -1mA

J

––– ––– 0.011 VGS = -4.5V, ID = -10A 

Static Drain-to-Source On-Resistance – – – ––– 0.015 VGS = -2.5V, ID = -8.5A 

Ω

––– ––– 0.022 VGS = -1.8V, ID = -7.0A 
Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 21 ––– ––– S VDS = -10V, ID = -10A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V

––– ––– 1.0 VDS = -12V, VGS = 0V

––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge ––– 69 100 ID = -8.0A
Gate-to-Source Charge ––– 9.1 14 nC VDS = -9.6V
Gate-to-Drain ("Miller") Charge ––– 21 32 VGS = -4.5V
Turn-On Delay Time ––– 19 ––– VDD = -6.0V
Rise Time ––– 20 ––– ID = -1.0A

ns

Turn-Off Delay Time ––– 240 ––– RD = 6.0Ω
Fall Time ––– 220 ––– VGS = -4.5V
Input Capacitance ––– 5050 ––– VGS = 0V
Output Capacitance – –– 1520 –– – pF VDS = -10V
Reverse Transfer Capacitance ––– 1120 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– –––

-1.5

––– ––– -80

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V 
Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = -1.5A
Reverse RecoveryCharge ––– 53 80 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t<10 sec

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

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D

S

IRF7701

100

10

1

0.1

D

-I , Drain-to-Source Current (A)

0.01

0.1 1 10

VGS

TOP

-7.00V

-4.5V

-3.0V

-2.5V

-1.8V

-1.5V

-1.2V

BOTTOM

-1.0V

-1.0V

20µs PULSE WIDTH
T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100

°

T = 25 C

J

°

T = 150 C

J

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10

VGS

TOP

-7.00V

-4.5V

-3.0V

-2.5V

-1.8V

-1.5V

-1.2V

BOTTOM

-1.0V

-1.0V

20µs PULSE WIDTH
T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output Characteristics

2.0

I =

D

-10A

1.5

10

1.0

1

D

-I , Drain-to-Source Current (A)

V = -10V

DS

0.1

1.0 1.5 2.0 2.5 3.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

(Normalized)

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-4.5V

Vs. Temperature

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