International Rectifier IRF7700 Datasheet

l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel

Description

HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex­tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter­national Rectifier is well known for,

signer with an extremely efficient and reliable device
for use in battery and load management.

The TSSOP-8 package, has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such

as portable electronics and PCMCIA cards.

provides the de-

PD - 93894A

IRF7700

HEXFET® Power MOSFET

V

DSS

-20V 0.015@VGS = -4.5V -8.6A

1
2
3

G

4

1 = D
2 = S
3 = S
4 = G

R

max I

DS(on)

0.024@VGS = -2.5V -7.3A

8

D

7
6

S

5

8 = D
7 = S
6 = S
5 = D

TSSOP-8

D

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V ±8.6
ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V ±6.8 A
I

DM

PD @TC = 25°C Power Dissipation 1.5
PD @TC = 70°C Power Dissipation 0.96

V

GS

T

J, TSTG

Drain- Source Voltage -20 V

Pulsed Drain Current  ±68

W

Linear Derating Factor 0.01 W/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient 83 °C/W

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IRF7700

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– – –– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.015 VGS = -4.5V, ID = -8.6A 
––– ––– 0.024 VGS = -2.5V, ID = -7.3A 

Ω

Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance -20 ––– ––– S VDS = -10V, ID = -8.6A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C

µA

nA

Total Gate Charge – – – 59 89 ID = -8.6A
Gate-to-Source Charge ––– 10 15 nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 19 29 VGS = -5.0V
Turn-On Delay Time ––– 19 ––– VDD = -10V
Rise Time ––– 40 ––– ID = -1.0A
Turn-Off Delay Time ––– 120 ––– RG = 6.0Ω

ns

Fall Time ––– 130 ––– VGS = -4.5V
Input Capacitance ––– 4300 ––– VGS = 0V
Output Capacitance ––– 880 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 580 ––– ƒ = TBDkHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

––– –––

-1.5

––– ––– -68

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V 
Reverse Recovery Time ––– 130 200 ns TJ = 25°C, IF = -1.5A
Reverse RecoveryCharge ––– 180 270 nC di/dt = 100A/µs



Notes:

 Repetitive rating; pulse width limited by

 When mounted on 1 inch square copper board, t<10 sec

max. junction temperature.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

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D

S

IRF7700

100

10

D

-I , Drain-to-Source Current (A)

1

0.1 1 10 100

VGS

TOP

-15V

-10V

-4.5V

-3.0V

-2.7V

-2.5V

-2.25V

BOTTOM

-2.0V

-2.0V

20µs PULSE WIDTH
T = 25 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 1. Typical Output Characteristics

100

)

(Α

TJ = 25°C

100

TOP

BOTTOM

VGS

-15V

-10V

-4.5V

-3.0V

-2.7V

-2.5V

-2.25V

-2.0V

-2.0V

10

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 150 C

1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

J

Fig 2. Typical Output Characteristics

2.0

1.5

I =

D

4.1A

TJ = 150°C

1.0

(Normalized)

, Drain-to-Source Current

D

-I

10

2.0 2.4 2.8 3.2

V

= -15V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

0.5

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

4.5V

Vs. Temperature

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