International Rectifier IRF7606 Datasheet
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
S
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
1
2
3
4
To p View
PD - 9.1264C
IRF7606
HEXFET® Power MOSFET
A
8
DS
V
7
D
6
D
5
DG
R
MICRO8
DSS
DS(on)
= -30V
= 0.09Ω
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.6
@ TA = 70°C Continuous Drain Current, VGS @ -10V -2.9 A
I
D
I
DM
PD @TA = 25°C Power Dissipation 1.8 W
V
GS
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J, TSTG
Pulsed Drain Current -19
Linear Derating Factor 14 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
θJA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
Maximum Junction-to-Ambient ––– 70
°C/W
8/25/97
IRF7606
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– – –– 0.09 V
––– – –– 0.15 V
Ω
= -10V, ID = -2.4A
GS
= -4.5V, ID = -1.2A
GS
Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 2.3 ––– ––– S VDS = -10V, ID = -1.2A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– –– – -100 V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -1.0 V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C
µA
nA
= -24V, VGS = 0V
DS
= -20V
GS
Total Gate Charge ––– 20 30 ID = -2.4A
Gate-to-Source Charge ––– 2.1 3.1 nC VDS = -24V
Gate-to-Drain ("Miller") Charge ––– 7.6 11 VGS = -10V, See Fig. 6 and 9
Turn-On Delay Time ––– 13 ––– VDD = -15V
Rise Time ––– 20 ––– ID = -2.4A
Turn-Off Delay Time ––– 43 ––– RG = 6.2Ω
ns
Fall Time ––– 39 ––– RD = 6.2Ω, See Fig. 10
Input Capacitance ––– 520 ––– VGS = 0V
Output Capacitance ––– 300 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 14 0 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
I
SD
Pulse width ≤ 300µs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
-1.8–––
A
-19
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.4A, VGS = 0V
Reverse Recovery Time ––– 43 64 ns TJ = 25°C, IF = -2.4A
Reverse RecoveryCharge ––– 50 76 nC di/dt = -100A/µs
≤ -2.4A, di/dt ≤ -130A/µs, V
DD
≤ V
(BR)DSS
≤ 10sec.
, TJ ≤ 150°C
D
G
S
IRF7606
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
10
D
-I , D r ain - to -S o ur c e Cu rr e n t ( A )
20µs PULS E WIDTH
-3.0V
T = 25 °C
1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
100
J
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
10
D
-I , Drain-to-So urce Curren t (A)
-3.0V
20µs PULS E WIDTH
T = 150°C
A
1
0.1 1 10
-V , D rain-to-Source Voltage (V)
DS
J
A
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I = -2.7A
D
T = 25°C
J
T = 150°C
10
D
-I , Drain-to -S o u rc e Curre n t ( A)
1
3.0 3.5 4.0 4.5 5.0 5.5 6.0
-V , G ate -to -Sou rc e Vo l ta g e (V)
GS
J
V = -1 0V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(No rm alized)
0.5
DS(on)
R , D rain -to-S o urc e O n R e si stan ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Ju nc tio n T em peratu r e (° C)
J
V = -1 0V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
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