International Rectifier IRF7555 Datasheet

● Trench Technology

● Ultra Low On-Resistance

● Dual P-Channel MOSFET

● Very Small SOIC Package

● Low Profile (<1.1mm)

● Available in Tape & Reel

Description

New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.

The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.

S1

G1

S2

G2

1

2

3

4

Top View

PD -91865B

IRF7555

HEXFET® Power MOSFET

8

7

6

5

D1

D1

D2

D2

Micro8

R

DS(on)

V

DSS

= -20V

= 0.055Ω

Absolute Maximum Ratings

Parameter Max. Units

V

DS

ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A
I

DM

PD @TA = 25°C Maximum Power Dissipation 1.25 W
PD @TA = 70°C Maximum Power Dissipation 0.8 W

Linear Derating Factor 10 mW/°C

V

GS

E

AS

dv/dt Peak Diode Recovery dv/dt  1.1 V/ns
TJ , T

STG

Soldering Temperature, for 10 seconds 240 (1.6mm from case)

Drain-Source Voltage -20 V

Pulsed Drain Current -34

Gate-to-Source Voltage ± 12 V

Single Pulse Avalanche Energy 36 mJ

Junction and Storage Temperature Range -55 to + 150 °C

Thermal Resistance

Parameter Max. Units

R

θJA

Maximum Junction-to-Ambient  100 °C/W

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IRF7555

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.005 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.055 VGS = -4.5V, ID = -4.3A 
––– ––– 0.105 VGS = -2.5V, ID = -3.4A 

Ω

Gate Threshold Voltage -0.60 ––– -1.2 V VDS = VGS, ID = -250µA
Forward Transconductance 2.5 ––– ––– S VDS = -10V, ID = -0.8A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C

µA

nA

Total Gate Charge ––– 10 15 ID = -3.0A
Gate-to-Source Charge ––– 2.1 3.1 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 2.5 3.7 VGS = -5.0V
Turn-On Delay Time ––– 10 ––– VDD = -10V
Rise Time ––– 46 ––– ID = -2.0A
Turn-Off Delay Time ––– 60 ––– RG = 6.0Ω

ns

Fall Time ––– 64 ––– RD = 5.0Ω 
Input Capacitance ––– 1066 ––– VGS = 0V
Output Capacitance ––– 402 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 126 ––– ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

-1.3

––– ––– -34

A

G

Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.6A, VGS = 0V 
Reverse Recovery Time ––– 54 82 ns TJ = 25°C, IF = -2.5A
Reverse Recovery Charge ––– 41 61 nC di/dt = -100A/µs



Notes:

 Repetitive rating; pulse width limited by

 Surface mounted on FR-4 board, t

≤ 10sec.

max. junction temperature.

 I

≤ -2.0A, di/dt ≤ -140A/µs, V

SD

TJ ≤ 150°C

DD

≤ V

(BR)DSS

,

 Starting T

RG = 25Ω, I

= 25°C, L = 8.0mH

J

= -3.0A.

AS

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

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D

S

IRF7555

100

10

1

TOP

BOTTOM

VGS

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

-1.50V

-1.50V

D

-I , Drain-to-Source Current (A)

20µs PULSE WIDTH

°

T = 25 C

0.1

0.1 1 10 100

-V , Drain-to-Source Voltage (V)

DS

100

J

100

10

1

D

-I , Drain-to-Source Current (A)

0.1

0.1 1 10 100

VGS

TOP

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

BOTTOM

-1.50V

-1.50V

20µs PULSE WIDTH
T = 150 C

J

-V , Drain-to-Source Voltage (V)

DS

°

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

2.0

I =

D

-4.3A

°

T = 25 C

10

J

°

T = 150 C

J

1.5

1.0

(Normalized)

0.5

D

-I , Drain-to-Source Current (A)

V = -15V

DS

1

1.0 2.0 3.0 4.0 5.0

-V , Gate-to-Source Voltage (V)

GS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

DS(on)

R , Drain-to-Source On Resistance

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature ( C)

J

Fig 4. Normalized On-Resistance

V =

GS

°

-4.5V

Vs. Temperature

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