International Rectifier IRF7534D1 Datasheet

PD -93864
IRF7534D1
FETKY MOSFET & Schottky Diode
Co-packaged HEXFET
MOSFET and Schottky diode
Ultra Low On-Resistance
MOSFET
Trench technology
Micro8
Available in Tape & Reel
TM
Footprint
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications, such as cell phones, PDAs, etc.
The Micro8TM package makes an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics
Absolute Maximum Ratings
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3 ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A I
DM
PD @TA = 25°C Maximum Power Dissipation 1.25 W PD @TA = 70°C Maximum Power Dissipation 0.8 W
Linear Derating Factor 10 mW/°C
V
GS
dv/dt Peak Diode Recovery dv/dt 1.1 V/ns TJ , T
STG
Drain-Source Voltage -20 V
Pulsed Drain Current -34
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
®
power
1
A
2
A
3
S
4
G
8
K
7
K
6
D
5
D
R
DS(on)
V
DSS
= -20V
= 0.055
Schottky Vf=0.39V
Top View
Micro8
Parameter Max. Units
Thermal Resistance
R
θJA
Notes:
Maximum Junction-to-Ambient 100 °C/W
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)I
-1.2A, di/dt 100A/µs, V
SD
DD
V
(BR)DSS
, TJ ≤ 150°C
Pulse width 300µs – duty cycle 2% When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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3/22/00
IRF7534D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
I
F(av)
I
SM
Schottky Diode Electrical Specifications
V
FM
I
RM
C
t
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated V
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
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Drain-to-Source Breakdown Voltage -20 – –– ––– V VGS = 0V, ID = -250µA
Static Drain-to-Source On-Resistance
––– ––– 0.055 VGS = -4.5V, ID = -4.3A ––– ––– 0.105 VGS = -2.5V, ID = -3.4A
Gate Threshold Voltage -0.6 ––– -1.2 V VDS = VGS, ID = -250µA Forward Transconductance 2.5 ––– ––– S VDS = -10V, ID = -0.8A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 10 15 ID = -3A Gate-to-Source Charge ––– 2.1 3.1 nC VDS = -10V Gate-to-Drain ("Miller") Charge ––– 2.5 3.7 VGS = -5V Turn-On Delay Time ––– 10 ––– VDD = -10V Rise Time ––– 46 ––– ID = -2A Turn-Off Delay Time ––– 60 ––– RG = 6.0
ns
Fall Time ––– 64 ––– RD = 5, Input Capacitance ––– 1066 ––– VGS = 0V Output Capacitance ––– 402 ––– pF VDS = -10V Reverse Transfer Capacitance ––– 125 ––– ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions Continuous Source Current(Body Diode) ––– –– – -1.3 Pulsed Source Current (Body Diode) ––– – –– -34
A
Body Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.6A, VGS = 0V Reverse Recovery Time (Body Diode) ––– 54 82 ns TJ = 25°C, IF = -2.5A Reverse Recovery Charge ––– 41 61 nC di/dt = 100A/µs
Parameter Max. Units Conditions
Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, TA = 25°C
A
1.4 Fig.13 TA = 70°C
See Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated Surge current 11 10ms sine or 6ms Rect. pulse load condition &
A
with V
RRM
applied
Parameter Max. Units Conditions
Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C V
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C .
Max. Reverse Leakage current 0.02 VR = 20V TJ = 25°C
mA
8 T
= 125°C
J
Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
R
Power MOSFET Characteristics
IRF7534D1
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM
-1.50V
-1.50V
20µs PULSE WIDTH T = 25 C
J
-V , Drain-to-Source Voltage (V)
DS
°
100
10
1
D
-I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM
-1.50V
-1.50V
20µs PULSE WIDTH T = 150 C
J
-V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
-4.3A
I =
D
°
T = 25 C
J
°
T = 150 C
J
10
D
-I , Drain-to-Source Current (A)
V = -15V
DS
1
1.0 2.0 3.0 4.0 5.0
-V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
-4.5V
Vs. Temperature
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