International Rectifier IRF7526D1 Datasheet
PD -91649C
IRF7526D1
TM
1
2
3
4
Top View
8
K
V
= -30V
R
DS(on)
DSS
= 0.20Ω
7
K
6
D
5
D
Schottky Vf = 0.39V
l Co-packaged HEXFET
MOSFET and Schottky Diode
l P-Channel HEXFET
l Low V
l Generation 5 Technology
l Micro8
Schottky Rectifier
F
TM
Footprint
Description
Power
FETKY MOSFET & Schottky Diode
A
A
S
G
The FETKYTMfamily of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
TM
package, with half the footprint area of the standard SO-8, provides
TM
will allow it to fit easily into extremely thin application
Micro8
TM
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Maximum Units
ID @ TA = 25°C -2.0
ID @ TA = 70°C -1.6
I
DM
PD @TA = 25°C 1.25
PD @TA = 70°C 0.8
V
GS
dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T
J, TSTG
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current ➀ -16
Power Dissipation
Linear Derating Factor 10 mW/°C
Gate-to-Source Voltage ± 20 V
Junction and Storage Temperature Range -55 to +150 °C
A
W
Thermal Resistance Ratings
Parameter Maximum Units
R
θJA
Notes:
Junction-to-Ambient ➃ 100 °C/W
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
I
≤ -1.2A, di/dt ≤ 160A/µs, V
SD
DD
≤ V
(BR)DSS
, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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5/7/99
IRF7526D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
I
F(av)
I
SM
Schottky Diode Electrical Specifications
V
FM
I
RM
C
t
dv/dt Max. Voltage Rate of Charge 3600 V/µs Rated V
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
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Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
Static Drain-to-Source On-Resistance
––– 0.17 0.20 VGS = -10V, ID = -1.2A
––– 0.30 0.40 VGS = -4.5V, ID = -0.60A
Ω
Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 0.94 ––– ––– S VDS = -10V, ID = -0.60A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 7.5 11 ID = -1.2A
Gate-to-Source Charge ––– 1.3 1.9 nC VDS = -24V
Gate-to-Drain ("Miller") Charge ––– 2.5 3.7 VGS = -10V, See Fig. 6
Turn-On Delay Time ––– 9.7 ––– VDD = -15V
Rise Time ––– 12 ––– ID = -1.2A
Turn-Off Delay Time ––– 19 ––– RG = 6.2Ω
ns
Fall Time ––– 9.3 ––– RD = 12Ω,
Input Capacitance ––– 180 ––– VGS = 0V
Output Capacitance ––– 87 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 42 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current(Body Diode) ––– – –– -1.25
Pulsed Source Current (Body Diode) ––– ––– -9.6
A
Body Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V
Reverse Recovery Time (Body Diode) ––– 30 45 ns TJ = 25°C, IF = -1.2A
Reverse Recovery Charge ––– 37 55 nC di/dt = 100A/µs
Parameter Max. Units Conditions
Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, TA = 25°C
A
1.3 TA = 70°C
See Fig. 14
Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
A
with V
RRM
applied
Parameter Max. Units Conditions
Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C
V
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C.
Max. Reverse Leakage current 0.06 VR = 30V TJ = 25°C
mA
16 TJ = 125°C
Max. Junction Capacitance 92 p F VR = 5Vdc ( 100kHz to 1 MHz) 25°C
R
A
A
A
A
Power Mosfet Characteristics
IRF7526D1
10
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
1
D
-I , Drain-to-Source Current (A)
-3.0 V
20µs PULSE WIDTH
T = 25°C
0.1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
10
T = 25°C
J
10
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
1
-3.0 V
D
-I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
0.1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
Fig 2. Typical Output Characteristics
2.0
I = -1.2A
D
1.5
T = 150°C
J
1
1.0
(Norm a li zed )
0.5
D
-I , D rain- to-S o urc e C u rre nt (A )
0.1
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
-V , G ate -to-S o u rce Vo lta ge (V )
GS
V = - 1 0V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
DS (on)
R , D r a in-to -S o u rc e O n R e s is ta nc e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , J unc tion T emp eratur e (°C )
J
Fig 4. Normalized On-Resistance
V = - 10 V
GS
Vs. Temperature
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