International Rectifier IRF7524D1 Datasheet

PD -91648C

l Co-packaged HEXFET Power

MOSFET and Schottky Diode

l P-Channel HEXFET
l Low V
l Generation 5 Technology
l Micro8

Schottky Rectifier

F

TM

Footprint

Description

PRELIMINARY

FETKY MOSFET & Schottky Diode

A

A

S

G

TM

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4

Top View

IRF7524D1

8

K

7

K

6

D

5

D

The FETKYTMfamily of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.

The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8

TM

package, with half the footprint area of the standard SO-8, provides

TM

will allow it to fit easily into extremely thin application

TM

an ideal

environments such as portable electronics and PCMCIA cards.

V

= -20V

DSS

R

DS(on)

= 0.27Ω

Schottky Vf = 0.39V

TM

Micro8

Absolute Maximum Ratings

Parameter Maximum Units

ID @ TA = 25°C -1.7
ID @ TA = 70°C -1.4
I

DM

PD @TA = 25°C 1.25
PD @TA = 70°C 0.8

V

GS

dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns
T

J, TSTG

Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current ➀ -14
Power Dissipation
Linear Derating Factor 10 mW/°C

Gate-to-Source Voltage ± 12 V

Junction and Storage Temperature Range -55 to +150 °C

A

W

Thermal Resistance Ratings

Parameter Maximum Units

R

θJA

Notes:

Junction-to-Ambient ➃ 100 °C/W

 Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
 I

≤ -1.2A, di/dt ≤ 100A/µs, V

SD

DD

≤ V

(BR)DSS

, TJ ≤ 150°C

 Pulse width ≤ 300µs – duty cycle ≤ 2%
 When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

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01/29/99

IRF7524D1

MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

MOSFET Source-Drain Ratings and Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Schottky Diode Maximum Ratings

I

F(av)

I

SM

Schottky Diode Electrical Specifications

V

FM

I

RM

C

t

dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated V

( HEXFET is the reg. TM for International Rectifier Power MOSFET's )

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Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
Static Drain-to-Source On-Resistance

––– 0.17 0.27 VGS = -4.5V, ID = -1.2A 
––– 0.28 0.40 VGS = -2.7V, ID = -0.60A 

Ω

Gate Threshold Voltage -0.70 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 1.3 ––– ––– S VDS = -10V, ID = -0.60A

Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V

––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C

µA

nA

Total Gate Charge ––– 5.4 8.2 ID = -1.2A
Gate-to-Source Charge ––– 0.96 1.4 nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 2.4 3.6 VGS = -4.5V, See Fig. 6 
Turn-On Delay Time ––– 9.1 ––– VDD = -10V
Rise Time ––– 35 ––– ID = -1.2A
Turn-Off Delay Time ––– 38 ––– RG = 6.0Ω

ns

Fall Time ––– 43 ––– RD = 8.3Ω, 
Input Capacitance ––– 240 ––– VGS = 0V
Output Capacitance ––– 130 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 64 ––– ƒ = 1.0MHz, See Fig. 5

Parameter Min. Typ. Max. Units Conditions
Continuous Source Current(Body Diode) ––– – –– -1.25
Pulsed Source Current (Body Diode) ––– ––– -9.6

A

Body Diode Forward Voltage ––– – –– -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V
Reverse Recovery Time (Body Diode) ––– 52 78 ns TJ = 25°C, IF = -1.2A
Reverse Recovery Charge ––– 63 95 nC di/dt = 100A/µs



Parameter Max. Units Conditions

Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, TA = 25°C

A

1.4 Fig.14 TA = 70°C

See
Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &

A

with V

RRM

applied

Parameter Max. Units Conditions

Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C

0.62 IF = 2.0A, TJ = 25°C
V

0.39 IF = 1.0A, TJ = 125°C

0.57 IF = 2.0A, TJ = 125°C .

Max. Reverse Leakage current 0.02 VR = 20V TJ = 25°C

mA

8 T

= 125°C

J

Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C

R

A

A

10

1

TOP

BOTTOM

VGS

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

-1.50V

Power Mosfet Characteristics

10

TOP

BOTTOM

1

VGS

-7.50V

-5.00V

-4.00V

-3.50V

-3.00V

-2.50V

-2.00V

-1.50V

IRF7524D1

0.1

D

-I , Drain-to-Source Current (A)

0.01

0.1 1 10

-V , Drain-to-Source Voltage (V)

DS

-1.50V

20µs PULSE WIDTH

°

T = 25 C

J

Fig 1. Typical Output Characteristics

10

T = 25°C

J

T = 150°C

J

1

0.1

0.1

D

-I , Drain-to-Source Current (A)

0.01

0.1 1 10

-V , Drain-to-Source Voltage (V)

DS

-1.50V

20µs PULSE WIDTH
T = 150 C

J

°

Fig 2. Typical Output Characteristics

2.0

I = -1.2 A

D

1.5

1.0

(Norm alized)

0.5

D

-I , Drain-to-Source C urrent (A)

0.01

1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

-V , G ate -to-S o u rce Vo ltage (V)

GS

V = - 1 0V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

DS(on)

R , D r ain -to- S ou r c e On R e si s tan c e

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Junction Temperature (°C)

J

Fig 4. Normalized On-Resistance

V = - 4.5 V

GS

Vs. Temperature

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