International Rectifier IRF7523D1 Datasheet

● Co-packaged HEXFET

®

and Schottky Diode

● N-Channel HEXFET

● Low V

● Generation 5 Technology

● Micro8

Schottky Rectifier

F

TM

Footprint

Power MOSFET

A

A

S

G

FETKY

1

2

3

4

PD- 91647C

IRF7523D1







MOSFET / Schottky Diode

8

K

7

K

6

D

5

D

V

= 30V

DSS

R

DS(on)

= 0.11Ω

Schottky Vf = 0.39V

Description

Top View

The FETKYTMfamily of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.

The new Micro8

TM

package, with half the footprint area of the standard SO-8, provides

Micro8

TM

the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8

TM

will allow it to fit easily into extremely thin application

environments such as portable electronics and PCMCIA cards.

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Parameter Maximum Units

ID @ TA = 25°C Continuous Drain Current, VGS@10V➃ 2.7 A
ID @ TA = 70°C 2.1
I

DM

PD @TA = 25°C Power Dissipation ➃ 1.25 W
PD @TA = 70°C 0.8

V

GS

dv/dt Peak Diode Recovery dv/dt ➁ 6.2 V/ns
T

J, TSTG

Pulsed Drain Current ➀ 21

Linear Derating Factor 10 W/°C
Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to +150 °C

Thermal Resistance Ratings

Parameter Maximum Units

R

θJA

Junction-to-Ambient ➃ 100 °C/W

Notes:

➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
➁ I

≤ 1.7A, di/dt ≤ 120A/µs, V

SD

DD

≤ V

(BR)DSS

, TJ ≤ 150°C

➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance

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3/17/99

IRF7523D1

MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

MOSFET Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-to-Source Breakdown Voltage 30 — — V VGS = 0V, ID = 250µA
Static Drain-to-Source On-Resistance — 0.090 0.130 VGS = 10V, ID = 1.7A 

— 0.140 0.190 VGS = 4.5V, ID = 0.85A 

Ω

Gate Threshold Voltage 1.0 — — V VDS = VGS, ID = 250µA
Forward Transconductance 1.9 — — S VDS = 10V, ID = 0.85A
Drain-to-Source Leakage Current — — 1.0 VDS = 24V, VGS = 0V

——25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage — — -100 VGS = -20V
Gate-to-Source Reverse Leakage — — 100 VGS = 20V

µA

nA

Total Gate Charge — 7.8 12 ID = 1.7A
Gate-to-Source Charge — 1.2 1.8 nC VDS = 24V
Gate-to-Drain ("Miller") Charge — 2.5 3.8 VGS = 10V (see figure 6) ➂
Turn-On Delay Time — 4.7 — VDD = 15V
Rise Time — 10 — ID = 1.7A
Turn-Off Delay Time — 12 — RG = 6.1Ω

ns

Fall Time — 5.3 — RD = 8.7Ω ➂
Input Capacitance — 210 — VGS = 0V
Output Capacitance — 80 — pF VDS = 25V
Reverse Transfer Capacitance — 32 — ƒ = 1.0MHz (see figure 5)

Continuous Source Current (Body Diode) — — 1.25 A
Pulsed Source Current (Body Diode) — — 21
Body Diode Forward Voltage — — 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V
Reverse Recovery Time (Body Diode) — 40 60 ns TJ = 25°C, IF = 1.7A
Reverse Recovery Charge — 48 72 nC di/dt = 100A/µs ➂

2

Schottky Diode Maximum Ratings

Parameter Max. Units. Conditions

I

I

F(av)

SM

Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, TA = 25°C

A

1.3 Fig.14 TA = 70°C

See
Max. peak one cycle Non-repetitive 1 20 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &

A

with V

RRM

applied

Schottky Diode Electrical Specifications

Parameter Max. Units Conditions

V

FM

Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C

0.62 IF = 2.0A, TJ = 25°C
V

0.39 IF = 1.0A, TJ = 125°C

0.57 IF = 2.0A, TJ = 125°C .

I

RM

C

t

dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated V

Max. Reverse Leakage current 0.06 VR = 30V TJ = 25°C

mA

16 TJ = 125°C

Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C

R

2 www.irf.com

2

A

A

)

A

A

IRF7523D1

Power Mosfet Characteristics

100

VGS
TOP 15V
10V

7.0V

5.5V

4.5V

4.0V

3.5V
BOTTOM 3.0V

10

1

3.0V

D

I , Dra in -to -S o u rc e C u rre n t (A )

20µs PULS E WIDTH
T = 25°C

0.1

0.1 1 10

V , Dra in -to -So u rc e V o lt age (V)

DS

J

Fig 1. Typical Output Characteristics

100

100

VGS
TOP 15V
10V

7.0V

5.5V

4.5V

4.0V

3.5V
BOTTOM 3.0V

10

1

D

I , Dra in -to -S o u rc e C u rre n t (A )

3.0V

20µs PULS E WIDTH
T = 150°C

0.1

0.1 1 10

V , Dra in -to -So u rc e V o ltage (V)

DS

J

Fig 2. Typical Output Characteristics

100

T = 25°C

10

1

D

I , Drain-to-Source Current (A)

0.1

3.0 3.5 4.0 4.5 5.0 5.5 6.0

V , Ga te -to -So ur ce Voltage (V

GS

Fig 3. Typical Transfer Characteristics

J

T = 150°C

J

V = 10V

DS

20µs PULSE W IDTH

10

T = 150°C

J

T = 25°C

1

SD

I , Reverse Drain Current (A)

0.1

0.4 0.8 1.2 1.6 2.0

V , So urce-to-Drain Voltage (V)

SD

J

V = 0V

Fig 4. Typical Source-Drain Diode

GS

Forward Voltage

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