International Rectifier IRF7521D1 Datasheet
PD-91646C
IRF7521D1
MOSFET / Schottky Diode
8
K
7
K
6
D
5
D
● Co-packaged HEXFET
®
and Schottky Diode
● N-Channel HEXFET
● Low V
● Generation 5 Technology
● Micro8
Schottky Rectifier
F
TM
Footprint
Description
PRELIMINARY
Power MOSFET
A
A
S
G
FETKY
1
2
3
4
Top View
The FETKYTMfamily of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
TM
package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA cards.
V
= 20V
DSS
R
DS(on)
= 0.135Ω
Schottky Vf = 0.39V
TM
TM
Micro8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter Maximum Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 2.4 A
ID @ TA = 70°C 1.9
I
DM
PD @TA = 25°C Power Dissipation 1.3 W
PD @TA = 70°C 0.8
V
GS
dv/dt Peak Diode Recovery dv/dt ➁ 5.0 V/ns
T
J, TSTG
Pulsed Drain Current ➀ 19
Linear Derating Factor 10 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance Ratings
Parameter Maximum Units
R
θJA
Notes:
Junction-to-Ambient ➃ 100 °C/W
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ I
≤ 1.7A, di/dt ≤ 66A/µs, V
SD
DD
≤ V
(BR)DSS
, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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01/29/99
IRF7521D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Schottky Diode Maximum Ratings
I
F(av)
I
SM
Schottky Diode Electrical Specifications
V
FM
I
RM
C
t
dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated V
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
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Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
Static Drain-to-Source On-Resistance
––– 0.085 0.135 VGS = 4.5V, ID = 1.7A
––– 0.12 0.20 VGS = 2.7V, ID = 0.85A
Ω
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 2.6 ––– ––– S VDS = 10V, ID = 0.85A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 5.3 8. 0 ID = 1.7A
Gate-to-Source Charge ––– 0.84 1.3 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 2.2 3.3 VGS = 4.5V, See Fig. 6
Turn-On Delay Time –– – 5.7 – –– VDD = 10V
Rise Time ––– 24 ––– ID = 1.7A
Turn-Off Delay Time ––– 15 ––– RG = 6.0Ω
ns
Fall Time ––– 16 ––– RD = 5.7Ω,
Input Capacitance ––– 260 ––– VGS = 0V
Output Capacitance ––– 130 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current(Body Diode) ––– ––– 1.3
Pulsed Source Current (Body Diode) ––– ––– 14
A
Body Diode Forward Voltage ––– ––– 1. 2 V TJ = 25°C, IS = 1.7A, VGS = 0V
Reverse Recovery Time (Body Diode) ––– 39 59 ns TJ = 25°C, IF = 1.7A
Reverse RecoveryCharge ––– 37 56 nC di/dt = 100A/µs
Parameter Max. Units. Conditions
Max. Average Forward Current 1.9 50% Duty Cycle. Rectangular Wave, TA = 25°C
A
1.4 Fig.14 TA = 70°C
See
Max. peak one cycle Non-repetitive 12 0 5µs sine or 3µs Rect. pulse Following any rated
Surge current 11 10ms sine or 6ms Rect. pulse load condition &
A
with V
RRM
applied
Parameter Max. Units Conditions
Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C
0.62 IF = 2.0A, TJ = 25°C
V
0.39 IF = 1.0A, TJ = 125°C
0.57 IF = 2.0A, TJ = 125°C .
Max. Reverse Leakage current 0.02 VR = 20V TJ = 25°C
mA
8 T
= 125°C
J
Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C
R
2
2
)
A
)
A
A
)
A
IRF7521D1
Power Mosfet Characteristics
100
VGS
TO P 7. 5V
5.0 V
4.0 V
3.5 V
3.0 V
2.5 V
2.0 V
10
BOTTOM 1.5V
1
0.1
D
I , D ra in-to - S o urc e C u r ren t (A)
1.5V
20µs PULSE WIDTH
T = 25° C
0.01
0.1 1 10
V , Drain -to - S o ur c e Voltage (V
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
10
BOTTOM 1.5V
1
1.5V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
0.01
0.1 1 10
V , Drain -to -S o u r ce Vo ltage (V
DS
J
Fig 2. Typical Output Characteristics
2.0
I = 1.7 A
D
1.5
10
T = 150°C
J
T = 25°C
1
D
I , Dra in-to -S o urc e C u rre nt (A )
0.1
1.5 2.0 2.5 3.0 3.5 4.0
J
V = 10V
DS
20µs PULSE WIDTH
V , Gate -to-S o urce V oltage (V)
GS
Fig 3. Typical Transfer Characteristics
1.0
(Norm alized)
0.5
DS(on)
R , D r ain -to- S ou r c e On R e si s tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C
J
Fig 4. Normalized On-Resistance
V = 4.5 V
GS
Vs. Temperature
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