International Rectifier IRF7509 Datasheet
PD - 91270J
IRF7509
HEXFET® Power MOSFET
● Generation V Technology
● Ultra Low On-Resistance
● Dual N and P Channel MOSFET
● Very Small SOIC Package
● Low Profile (<1.1mm)
● Available in Tape & Reel
● Fast Switching
S1
G1
S2
G2
N-CHANNEL MOSFET
1
2
3
4
P-CHANNEL MOSFET
Top View
8
D1
7
D1
6
D2
5
D2
V
R
DS(on)
DSS
N-Ch P-Ch
30V -30V
0.11Ω 0.20Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
N-Channel P-Channel
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS 2.7 -2.0
ID @ TA = 70°C Continuous Drain Current, VGS 2.1 -1.6 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 1.25 W
PD @TA = 70°C Maximum Power Dissipation 0.8 W
Linear Derating Factor 10 mW/°C
V
GS
V
GSM
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ , T
STG
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Drain-Source Voltage 30 -30 V
Pulsed Drain Current 21 -16
Gate-to-Source Voltage ± 20 V
Gate-to-Source Voltage Single Pulse tp<10µS 30 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 100 °C/W
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12/1/98
IRF7509
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V
∆V
R
V
g
I
DSS
I
GSS
Q
Q
Q
t
d(on)
t
r
t
d(off)
t
f
C
C
C
Parameter Min. Typ. Max. Units Conditions
(BR)DSS
(BR)DSS
DS(ON)
GS(th)
fs
Drain-to-Source Breakdown Voltage
/∆TJBreakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage N-P – – — ±100 VGS = ± 20V
g
gs
gd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
iss
oss
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Ch 30 — — V
P-Ch -30 — — V
N-Ch — 0.059 — Reference to 25°C, ID = 1mA
P-Ch — -0.039 — Reference to 25°C, I
— 0.09 0.110 V
N-Ch
— 0.14 0.175 V
— 0.17 0.20 V
P-Ch
— 0.30 0.40 V
V/°C
N-Ch 1.0 — — VDS = VGS, ID = 250µA
P-Ch -1.0 — — V
N-Ch 1.9 — — V
P-Ch 0.92 — — V
N-Ch — — 1.0 V
P-Ch — — -1.0 V
N-Ch — — 25 VDS = 24V, VGS = 0V, TJ = 125°C
µA
P-Ch — — -25 V
N-Ch –– 7.8 12
P-Ch — 7.5 11
N-Ch –– 1.2 1.8
P-Ch — 1.3 1.9
nC
N-Ch –– 2.5 3.8
P-Ch — 2.5 3.7
N-Ch — 4.7 —
P-Ch — 9.7 —
N-Ch — 10 —
P-Ch — 12 —
N-Ch — 12 —
ns
P-Ch — 19 —
N-Ch — 5.3 —
P-Ch — 9.3 —
N-Ch — 210 —
P-Ch — 180 —
N-Ch — 80 — pF
P-Ch — 87 —
N-Ch — 32 —
P-Ch — 42 —
= 0V, ID = 250µA
GS
V
= 0V, ID = -250µA
GS
= 10V, ID = 1.7A
GS
= 4.5V, ID = 0.85A
GS
Ω
= -10V, ID =-1.2A
GS
= -4.5V, ID =-0.6A
GS
V
= VGS, ID = -250µA
DS
= 10V, ID = 0.85A
DS
S
= -10V, ID = -0.6A
DS
= 24V, VGS = 0V
DS
= -24V, VGS = 0V
DS
= -24V, VGS = 0V, TJ = 125°C
DS
N-Channel
I
= 1.7A, VDS = 24V, VGS = 10V
D
P-Channel
I
= -1.2A, VDS = -24V, VGS = -10V
D
N-Channel
= 15V, ID = 1.7A, RG = 6.1Ω,
V
DD
RD = 8.7Ω
P-Channel
V
= -15V, ID = -1.2A, RG = 6.2Ω,
DD
RD = 12Ω
N-Channel
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
P-Channel
V
= 0V, VDS = -25V, ƒ = 1.0MHz
GS
= -1mA
D
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
N-Channel I
P-Channel I
≤ 1.7A, di/dt ≤ 120A/µs, V
SD
≤ -1.2A, di/dt ≤ 160A/µs, V
SD
DD
DD
≤ V
N-Ch — — 1.25
P-Ch — — -1.25
N-Ch — — 21
P-Ch — — -16
N-Ch — — 1.2 T
P-Ch — — -1.2 T
N-Ch — 40 60
P-Ch — 30 45
N-Ch — 48 72
P-Ch — 37 55
, TJ ≤ 150°C
(BR)DSS
≤ V
(BR)DSS
, TJ ≤ 150°C
A
= 25°C, IS = 1.7A, VGS = 0V
J
V
= 25°C, IS = -1.8A, VGS = 0V
J
N-Channel
ns
T
= 25°C, IF = 1.7A, di/dt = 100A/µs
J
P-Channel
nC
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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100
A
A
A
A
A
10
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
N - Channel
100
VG S
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
IRF7509
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 1 0
V , Drain-to-Source Voltage (V)
DS
3.0V
20µs PULS E W IDTH
T = 2 5 °C
J
Fig 1. Typical Output Characteristics
100
T = 25°C
10
1
D
I , Drain-to-Source Current (A)
0.1
3.0 3.5 4.0 4.5 5.0 5.5 6.0
V , Gate-to-Source Voltage (V)
GS
J
T = 150°C
J
V = 10V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
I = 1.7 A
D
1
D
I , Dra in -to -S o u rc e C urre nt (A)
0.1
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
3.0V
20µs PULSE WIDTH
T = 150°C
J
Fig 2. Typical Output Characteristics
100
10
T = 150°C
J
T = 25°C
1
SD
I , Reverse D rain C urren t (A)
0.1
0.4 0.8 1.2 1.6 2.0
J
V = 0 V
GS
V , Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.220
1.5
1.0
0.180
0.140
VGS = 4.5V
(Norm a li z e d )
0.5
DS(on)
R , D r ain -to -Sour c e On Resi s tan c e
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
J
V = 1 0 V
GS
Fig 5. Normalized On-Resistance
Vs. Temperature
0.100
DS (on)
0.060
R , Drain-to-Source On Resistance
0 2 4 6 8 10
VGS = 10V
I , Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Current
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