International Rectifier IRF7507 Datasheet
PD - 91269I
IRF7507
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
S1
G1
S2
G2
N-CHANNEL MOSFET
1
2
3
4
P-CHANNEL MOSFET
Top View
8
D1
7
D1
6
D2
5
D2
V
R
DS(on)
DSS
N-Ch P-Ch
20V -20V
0.135Ω 0.27Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
N-Channel P-Channel
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS 2.4 -1.7
ID @ TA = 70°C Continuous Drain Current, VGS 1.9 -1.4 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 1.25 W
PD @TA = 70°C Maximum Power Dissipation 0.8 W
Linear Derating Factor 10 mW/°C
V
GS
V
GSM
dv/d t Peak Diode Recovery dv/dt 5.0 -5.0 V/ns
TJ , T
STG
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Drain-Source Voltage 20 -20 V
Pulsed Drain Current 19 -14
Gate-to-Source Voltage ± 12 V
Gate-to-Source Voltage Single Pulse tp<10µS 16 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 100 °C/W
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IRF7507
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
t
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
C
C
C
DSS
GSS
d(on)
r
d(off)
f
Parameter Min. Typ. Max. Units Conditions
(BR)DSS
(BR)DSS
DS(ON)
GS(th)
fs
Drain-to-Source Breakdown Voltage
/∆TJBreakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage N- P –– — ±100 VGS = ± 12V
g
gs
gd
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
iss
oss
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Ch 20 — — V
P-Ch -20 — — V
N-Ch — 0.041 — Reference to 25°C, ID = 1mA
P-Ch — -0.012 — Reference to 25°C, I
— 0.085 0.14 V
N-Ch
— 0.120 0.20 VGS = 2.7V, ID = 0.85A
— 0.17 0.27 VGS = -4.5V, ID =-1.2A
P-Ch
— 0.28 0.40 VGS = -2.7V, ID =-0.6A
V/°C
N-Ch 0.7 — — VDS = VGS, ID = 250µA
P-Ch -0.7 — — V
N-Ch 2.6 — — V
P-Ch 1.3 — — VDS = -10V, ID = -0.6A
N-Ch — — 1.0 VDS = 16V, VGS = 0V
P-Ch — — -1.0 V
N-Ch — — 25 VDS = 16V, VGS = 0V, TJ = 125°C
µA
P-Ch — — -25 V
N-Ch –– 5.3 8.0
P-Ch — 5.4 8.2
N-Ch –– 0.84 1.3
P-Ch — 0.96 1.4
nC
N-Ch –– 2.2 3.3
P-Ch — 2.4 3.6
N-Ch — 5.7 —
P-Ch — 9.1 —
N-Ch — 24 —
P-Ch — 35 —
N-Ch — 15 —
ns
P-Ch — 38 —
N-Ch — 16 —
P-Ch — 43 —
N-Ch — 260 —
P-Ch — 240 —
N-Ch — 130 — pF
P-Ch — 130 —
N-Ch — 61 —
P-Ch — 64 —
= 0V, ID = 250µA
GS
V
= 0V, ID = -250µA
GS
= 4.5V, ID = 1.7A
GS
Ω
V
= VGS, ID = -250µA
DS
= 10V, ID = 0.85A
DS
S
= -16V, VGS = 0V
DS
= -16V, VGS = 0V, TJ = 125°C
DS
N-Channel
I
= 1.7A, VDS = 16V, VGS = 4.5V
D
P-Channel
I
= -1.2A, VDS = -16V, VGS = -4.5V
D
N-Channel
= 10V, ID = 1.7A, RG = 6.0Ω,
V
DD
RD = 5.7Ω
P-Channel
V
= -10V, ID = -1.2A, RG = 6.0Ω,
DD
RD = 8.3Ω
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
V
= 0V, VDS = -15V, ƒ = 1.0MHz
GS
= -1mA
D
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
N-Channel I
P-Channel I
≤ 1.7A, di/dt ≤ 66A/µs, V
SD
≤ -1.2A, di/dt ≤ 100A/µs, V
SD
DD
DD
≤ V
≤ V
N-Ch — — 1.25
P-Ch — — -1.25
N-Ch — — 19
A
P-Ch — — -14
N-Ch — — 1.2 T
P-Ch — — -1.2 TJ = 25°C, IS = -1.2A, VGS = 0V
N-Ch — 39 59
P-Ch — 52 78
N-Ch — 37 56
P-Ch — 63 95
= 25°C, IS = 1.7A, VGS = 0V
J
V
N-Channel
ns
T
= 25°C, IF = 1.7A, di/dt = 100A/µs
J
P-Channel
nC
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
Pulse width ≤ 300µs; duty cycle ≤ 2%.
(BR)DSS
(BR)DSS
, TJ ≤ 150°C
, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
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100
A
A
A
A
A
A
10
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
N - Channel
100
10
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
IRF7507
1
0.1
D
I , Dra in-to -S ou rc e C ur re nt (A )
0.01
0.1 1 1 0
V , Drain-to-Source Voltage (V)
DS
1.5V
20µs PULS E W IDTH
T = 2 5 °C
J
Fig 1. Typical Output Characteristics
100
10
T = 150°C
J
T = 25°C
1
D
I , Drain-to-Source Current (A)
0.1
1.5 2.0 2.5 3.0 3.5 4.0
J
V = 10 V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
1
1.5V
0.1
D
I , Dra in-to -S ou rc e Cu rren t (A )
0.01
0.1 1 1 0
V , Drain-to-Source Voltage (V)
DS
20µs PULS E WIDTH
T = 15 0 ° C
J
Fig 2. Typical Output Characteristics
100
10
T = 150°C
J
1
SD
I , Reverse D rain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T = 25°C
J
V = 0V
GS
V , S o urc e-to-Drain V o ltage (V )
SD
Fig 4. Typical Source-Drain Diode
Forward Voltage
DS(on)
R , D ra in-to -S o u rc e O n R e si sta n ce
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2.0
I = 1.7A
D
1.5
1.0
(Normalized)
0.5
V = 4 .5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Tem perature (°C)
J
GS
Fig 5. Normalized On-Resistance
Vs. Temperature
0.8
0.6
0.4
V = 2.5V
0.2
, Drain-to-Source On Resistance
DS(on)
R
V = 5 .0V
GS
0.0
0246
GS
I , Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Current
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