International Rectifier IRF7506 Datasheet

PD - 9.1268F

IRF7506

HEXFET® Power MOSFET

l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching

Description

S1
G1

S2

G2

1

2

3

4

To p V iew

Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.

The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device
for applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will
allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA
cards.

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -1.7

@ TA = 70°C Continuous Drain Current, VGS @ -10V -1.4 A

I

D

I

DM

PD @TA = 25°C Power Dissipation 1.25 W

V

GS

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J, TSTG

Pulsed Drain Current  -9.6

Linear Derating Factor 10 mW/°C
Gate-to-Source Voltage ± 20 V

Junction and Storage Temperature Range -55 to + 150 °C

8

7

6

5

D1
D1

D2
D2

MICRO8

V

R

DS(on)

DSS

= -30V

= 0.27Ω

Thermal Resistance Ratings

Parameter Typ. Max. Units

R

θJA

All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .

Maximum Junction-to-Ambient ––– 100

°C/W

8/25/97

IRF7506

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– -0.039 ––– V/°C Reference to 25°C, ID = -1mA

J

Static Drain-to-Source On-Resistance

––– ––– 0.27 V
––– ––– 0.45 V

Ω

= -10V, ID = -1.2A 

GS

= -4.5V, ID = -0.60A 

GS

Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 0.92 –– – –– – S VDS = -10V, ID = -0.60A

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage ––– ––– -100 V
Gate-to-Source Reverse Leakage ––– – –– 100 VGS = 20V

––– ––– -1.0 V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C

µA

nA

= -24V, VGS = 0V

DS

= -20V

GS

Total Gate Charge ––– 7.5 11 ID = -1.2A
Gate-to-Source Charge ––– 1.3 1.9 nC VDS = -24V
Gate-to-Drain ("Miller") Charge ––– 2.5 3.7 VGS = -10V, See Fig. 6 and 9 
Turn-On Delay Time ––– 9.7 ––– VDD = -15V
Rise Time ––– 12 ––– ID = -1.2A
Turn-Off Delay Time ––– 19 ––– RG = 6.2Ω

ns

Fall Time ––– 9.3 ––– RD = 12Ω, See Fig. 10 
Input Capacitance ––– 180 ––– VGS = 0V
Output Capacitance ––– 87 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 42 –– – ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)

 I

SD

 Pulse width ≤ 300µs – duty cycle ≤ 2%

 Surface mounted on FR-4 board, t

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.

–––

–––

–––

-1.25–––
A

-9.6

Diode Forward Voltage ––– – –– -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V 
Reverse Recovery Time ––– 30 45 ns TJ = 25°C, IF = -1.2A
Reverse RecoveryCharge ––– 37 5 5 nC di/dt = -100A/µs

≤ -1.2A, di/dt ≤ -140A/µs, V

DD

≤ V

(BR)DSS

≤ 10sec.

, TJ ≤ 150°C

D

G

S



IRF7506

10

VGS
TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V
BOTT OM - 3.0V

1

-3.0V

D

-I , D r ain - to -S o ur c e Cu rr e n t ( A )

20µs PULS E WI DTH
T = 25 °C

0.1

0.1 1 10

-V , Drain-to-Source Voltage (V)

DS

J

Fig 1. Typical Output Characteristics

10

10

VGS
TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V
BOTT OM - 3.0V

1

-3.0V

D

-I , D r ain - to -S o ur c e Cu rr e n t ( A )

20µs PULS E WI DTH
T = 150°C

A

0.1

0.1 1 10

-V , Drain-to-Source Voltage (V)

DS

J

A

Fig 2. Typical Output Characteristics

2.0

I = -1 .2 A

D

T = 25°C

J

T = 150°C

J

1

D

-I , Drain-to- So u rc e C u rr e n t (A)

0.1

3.0 4.0 5.0 6.0 7.0

-V , G ate-to - S ourc e V o l ta g e (V )

GS

V = -1 0V

DS

20µs PULSE WIDTH

Fig 3. Typical Transfer Characteristics

1.5

1.0

(No rm alized)

0.5

DS(on)

R , Dra in-to -S ourc e On R e sista n ce

A

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

T , Ju nc tio n T em per atu re ( °C )

J

V = -10V

GS

A

Fig 4. Normalized On-Resistance

Vs. Temperature