International Rectifier IRF7504 Datasheet
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
S1
G1
S2
G2
1
2
3
4
To p V iew
HEXFET
8
D1
7
D1
6
D2
5
D2
PD - 9.1267G
IRF7504
®
Power MOSFET
V
= -20V
DSS
R
DS(on)
= 0.27Ω
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
Micro8
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -1.7
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -1.4 A
I
DM
PD @TA = 25°C Power Dissipation 1.25 W
V
GS
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J, TSTG
Pulsed Drain Current -9.6
Linear Derating Factor 10 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
Maximum Junction-to-Ambient ––– 100
°C/W
8/25/97
IRF7504
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = +12V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.27 VGS = -4.5V, ID = -1.2A
––– ––– 0.40 VGS = -2.7V, ID = -0.60A
Ω
Gate Threshold Voltage -0.70 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 1.3 ––– ––– S VDS = -10V, ID = -0.60A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
––– ––– -1.0 VDS = -16V, VGS = 0V
––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 5.4 8.2 ID = -1.2A
Gate-to-Source Charge ––– 0.96 1.4 nC VDS = -16V
Gate-to-Drain ("Miller") Charge ––– 2.4 3.6 VGS = -4.5V, See Fig. 6 and 9
Turn-On Delay Time ––– 9.1 – –– VDD = -10V
Rise Time ––– 35 – –– ID = -1.2A
Turn-Off Delay Time ––– 38 ––– RG = 6.0Ω
ns
Fall Time ––– 43 ––– RD = 8.3Ω, See Fig. 10
Input Capacitance ––– 240 ––– VGS = 0V
Output Capacitance ––– 130 ––– pF VDS = -15V
Reverse Transfer Capacitance ––– 6 4 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
TJ ≤ 150°C
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– -1.25
––– ––– -9.6
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V
Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = -1.2A
Reverse RecoveryCharge ––– 63 95 nC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
≤ -1.2A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
Surface mounted on FR-4 board, t
,
D
A
≤ 10sec.
G
S
IRF7504
100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
10
BOTT OM - 1.5V
1
0.1
D
-I , Drain-to-So urce C urrent (A)
-1.5V
0.01
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDT H
T = 25 °C
J
Fig 1. Typical Output Characteristics
10
T = 25°C
J
T = 150°C
J
1
100
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
10
BOTT OM - 1.5V
1
0.1
D
-I , Drain-to-Source Current (A)
-1.5V
20µs PUL SE WI DTH
T = 150 °C
A
0.01
0.1 1 10
-V , Drain-to-So urc e V oltag e (V )
DS
J
A
Fig 2. Typical Output Characteristics
2.0
I = -1. 2 A
D
1.5
0.1
D
-I , Dra in-to - Sou r c e C urr e n t (A )
0.01
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-V , G ate-to - S ou rc e V o l ta g e (V)
GS
V = -10V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
(No rm alized)
0.5
DS(on)
R , Dra in-to -S ourc e O n R e sista n ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Ju nc tio n T em peratu re ( °C )
J
V = -4.5 V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
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