International Rectifier IRF7501 Datasheet
PD - 91265H
PRELIMINARY
HEXFET® Power MOSFET
l Generation V Technology
l Ulrtra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
S1
G1
S2
G2
1
2
3
4
Top View
IRF7501
8
D1
7
D1
6
D2
5
D2
R
DS(on)
V
DSS
= 0.135Ω
Micro8
=20V
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.4
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.9 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 1.25 W
PD @TA = 70°C Maximum Power Dissipation 0.8 W
V
GSM
V
GS
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ , TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C
Drain-Source Voltage 20 V
Pulsed Drain Current 19
Linear Derating Factor 0.01 W/°C
Gate-to-Source Voltage Single Pulse tp<10µs 16 V
Gate-to-Source Voltage ± 12 V
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance
Parameter Max. Units
R
θJA
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
Maximum Junction-to-Ambient 100 °C/W
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4/30/98
IRF7501
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– 0.085 0.135 VGS = 4.5V, ID = 1.7A
––– 0.120 0.20 VGS = 2.7V, ID = 0.85A
Ω
Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
Forward Transconductance 2.6 ––– ––– S VDS = 10V, ID = 0.85A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 5.3 8.0 ID = 1.7A
Gate-to-Source Charge ––– 0.84 1.3 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 2.2 3.3 VGS = 4.5V, See Fig. 9
Turn-On Delay Time ––– 5.7 ––– VDD = 10V
Rise Time ––– 24 ––– ID = 1.7A
Turn-Off Delay Time ––– 15 ––– RG = 6.0Ω
ns
Fall Time ––– 16 ––– RD = 5.7Ω
Input Capacitance ––– 260 ––– VGS = 0V
Output Capacitance ––– 130 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– –––
1.25
––– ––– 19
A
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.7A, VGS = 0V
Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 1.7A
Reverse Recovery Charge ––– 37 56 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%
max. junction temperature. ( See fig. 10 )
I
≤ 1.7A, di/dt ≤ 66A/µs, V
SD
DD
≤ V
(BR)DSS
,
Surface mounted on FR-4 board, t ≤10sec
TJ ≤ 150°C
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D
S
IRF7501
A
A
)
A
A
100
V G S
TOP 7.5V
5 .0V
4 .0V
3 .5V
3 .0V
2 .5V
2 .0V
10
BOTTOM 1.5V
1
0.1
D
I , Drain-to -So urc e C u rren t (A)
1.5V
20µs PULS E W IDTH
T = 25°C
0.01
0.1 1 10
V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
10
BOTTOM 1.5V
1
1.5V
0.1
D
I , D ra in-to -S o u rc e C u rre n t (A )
20µs PULS E WIDTH
T = 150°C
0.01
0.1 1 10
V , D rain-to-Source V oltage (V)
DS
J
Fig 2. Typical Output Characteristics
100
10
T = 150°C
J
T = 25°C
1
D
I , D rain-to-Source Current (A)
0.1
1.5 2.0 2.5 3.0 3.5 4.0
J
V = 10V
DS
20µs PULSE W IDTH
V , Gate - to -Sou rc e Voltage (V
GS
Fig 3. Typical Transfer Characteristics
10
T = 150°C
J
SD
T = 25°C
J
V = 0V
1
SD
I , Reverse Drain Current (A)
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , So urce-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
GS
Forward Voltage
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