International Rectifier IRF7478 Datasheet
SMPS MOSFET
A
PD- 94055A
IRF7478
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
max (m
60V 26@VGS = 10V 4.2A
Ω)Ω)
Ω) I
Ω)Ω)
D
30@VGS = 4.5V 3.5A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
S
S
S
1
2
3
4
Top V iew
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.6 A
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
V
GS
dv/dt Peak Diode Recovery dv/dt 3.7 V/ns
T
J
T
STG
Pulsed Drain Current 56
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 20 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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3/13/01
IRF7478
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 410 ––– VGS = 0V, VDS = 0V to 48V
oss
Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA
––– 20 26 VGS = 10V, ID = 4.2A
––– 23 30 VGS = 4.5V, ID = 3.5A
mΩ
Gate Threshold Voltage 1.0 – –– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 48V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 48V, VGS = 0V
µA
nA
VGS = -20V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 4.2A
Total Gate Charge ––– 21 31 ID = 4.2A
Gate-to-Source Charge ––– 4.3 ––– nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– 9 .6 ––– VGS = 4.5V
Turn-On Delay Time ––– 7 .7 ––– VDD = 30V
Rise Time ––– 2.6 ––– ID = 4.2A
Turn-Off Delay Time ––– 44 ––– RG = 6.2Ω
ns
Fall Time ––– 13 ––– VGS = 10V
Input Capacitance ––– 1740 ––– VGS = 0V
Output Capacitance ––– 300 ––– VDS = 25V
Reverse Transfer Capacitance ––– 37 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 1590 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 220 ––– VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 140 mJ
Avalanche Current ––– 4.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.3
56
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.2A, VGS = 0V
Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 4.2A
Reverse RecoveryCharge ––– 100 150 nC di/dt = 100A/µs
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D
S
IRF7478
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
100
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
7.0A
I =
D
)
(Α
10
, Drain-to-Source Current
D
I
Fig 3. Typical Transfer Characteristics
TJ = 150°C
TJ = 25°C
V
= 25V
DS
1
2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
20µs PULSE WIDTH
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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