International Rectifier IRF7476 Datasheet
A
PD - 94311
IRF7476
HEXFET® Power MOSFET
Applications
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters for
V
DSS
12V 8.0m
R
DS(on)
ΩΩ
Ω@V
ΩΩ
max I
= 4.5V 15A
GS
D
Netcom and Computing Applications.
l Power Management for Netcom,
Computing and Portable Applications.
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
TJ , T
STG
Drain-Source Voltage 12 V
Gate-to-Source Voltage ±12 V
Pulsed Drain Current 120
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
www.irf.com 1
04/29/02
IRF7476
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 12 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.014 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.0 8.0 VGS = 4.5V, ID = 15A
––– 12 30 VGS = 2.8V, ID = 12A
mΩ
Gate Threshold Voltage 0 .6 ––– 1 .9 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 100
––– ––– 250 VDS = 9.6V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 20 0 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
µA
nA
= 9.6V, VGS = 0V
V
DS
VGS = -12V
Forward Transconductance 31 ––– ––– S VDS = 6.0V, ID = 12A
Total Gate Charge ––– 26 40 ID = 12A
Gate-to-Source Charge ––– 4.6 – –– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 11 ––– VGS = 4.5V
Output Gate Charge ––– 17 ––– VGS = 0V, VDS = 5.0V
Turn-On Delay Time ––– 11 ––– VDD = 6.0V
Rise Time ––– 29 ––– ID = 12A
Turn-Off Delay Time ––– 19 ––– RG = 1.8Ω
ns
Fall Time ––– 8.3 ––– VGS = 4.5V
Input Capacitance ––– 2550 ––– VGS = 0V
Output Capacitance ––– 2190 ––– VDS = 6.0V
Reverse Transfer Capacitance ––– 450 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 160 mJ
Avalanche Current ––– 12 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.87 1.2 V TJ = 25°C, IS = 12A, VGS = 0V
––– 0.73 ––– TJ = 125°C, IS = 12A, VGS = 0V
2.5
120
showing the
A
p-n junction diode.
G
Reverse Recovery Time ––– 55 82 ns TJ = 25°C, IF = 12A, VR=12V
Reverse Recovery Charge ––– 59 89 nC di/dt = 100A/µs
Reverse Recovery Time ––– 54 81 ns TJ = 125°C, IF = 12A, VR=12V
Reverse Recovery Charge ––– 60 90 nC di/dt = 100A/µs
2 www.irf.com
D
S
IRF7476
1000
100
10
1
0.1
1.5V
, Drain-to-Source Current (A)
D
0.01
I
20µs PULSE WIDTH
0.001
0.1 1 10 100
Tj = 25°C
VDS, Drain-to-Source Voltage (V)
1000.00
V
TOP 10V
8.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
GS
5.0V
1000
100
10
1
, Drain-to-Source Current (A)
0.1
D
I
1.5V
20µs PULSE WIDTH
Tj = 150°C
0.01
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
15A
I =
D
V
TOP 10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
GS
)
(Α
100.00
1.5
TJ = 150°C
10.00
1.00
, Drain-to-Source Current
D
I
TJ = 25°C
V
= 10V
DS
20µs PULSE WIDTH
0.10
1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
V =
4.5V
GS
Vs. Temperature
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