International Rectifier IRF7471 Datasheet
A
PD- 94036B
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
HEXFET® Power MOSFET
V
DSS
40V 13mΩ 10A
R
DS(on)
IRF7471
max I
D
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.3 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , T
STG
Drain-Source Voltage 40 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 83
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
www.irf.com 1
3/25/01
IRF7471
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.043 ––– V/°C Reference to 25°C, ID = 1mA
––– 9.5 13 VGS = 10V, ID = 10A
––– 12 16 VGS = 4.5V, ID = 8.0A
mΩ
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 32V, VGS = 0V
µA
nA
VGS = -16V
Forward Transconductance 22 ––– ––– S VDS = 20V, ID = 8.0A
Total Gate Charge – –– 21 32 ID = 8.0A
Gate-to-Source Charge ––– 7.2 11 nC VDS = 20V
Gate-to-Drain ("Miller") Charge ––– 8.2 12 VGS = 4.5V
Output Gate Charge ––– 23 35 VGS = 0V, VDS = 16V
Turn-On Delay Time ––– 12 ––– VDD = 20V
Rise Time ––– 2.7 ––– ID = 8.0A
Turn-Off Delay Time ––– 15 ––– RG = 1.8Ω
ns
Fall Time ––– 4.1 ––– VGS = 4.5V
Input Capacitance ––– 2820 ––– VGS = 0V
Output Capacitance ––– 700 ––– VDS = 20V
Reverse Transfer Capacitance ––– 46 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 300 mJ
Avalanche Current ––– 8.0 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.80 1.3 V TJ = 25°C, IS = 8.0A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 8.0A, VGS = 0V
2.3
83
showing the
A
p-n junction diode.
G
Reverse Recovery Time – –– 69 100 ns TJ = 25°C, IF = 8.0A, VR= 20V
Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
Reverse Recovery Time – –– 73 110 ns TJ = 125°C, IF = 8.0A, VR=20V
Reverse Recovery Charge ––– 160 240 nC di/dt = 100A/µs
2 www.irf.com
D
S
IRF7471
1000
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
10A
I =
D
2.0
°
T = 150 C
J
1.5
10
°
T = 25 C
J
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
2.0 2.5 3.0 3.5 4.0 4.5
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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