International Rectifier IRF7470 Datasheet
A
PD- 93913C
SMPS MOSFET
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
V
DSS
HEXFET® Power MOSFET
R
DS(on)
IRF7470
max I
D
40V 13mΩ 10A
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
at 4.5V V
GS
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.5 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , T
STG
Drain-Source Voltage 40 V
Gate-to-Source Voltage ± 12 V
Pulsed Drain Current 85
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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3/25/01
IRF7470
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 40 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
––– 9.0 13 VGS = 10V, ID = 10A
Static Drain-to-Source On-Resistance
––– 10 15 mΩ VGS = 4.5V, ID = 8.0A
––– 14.5 30 VGS = 2.8V, ID = 5.0A
Gate Threshold Voltage 0.8 ––– 2 .0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125C
Gate-to-Source Forward Leakage ––– – –– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 32V, VGS = 0V
µA
nA
VGS = -12V
Forward Transconductance 27 ––– ––– S VDS = 20V, ID = 8.0A
Total Gate Charge ––– 29 44 ID = 8.0A
Gate-to-Source Charge ––– 7.9 12 nC VDS = 20V
Gate-to-Drain ("Miller") Charge ––– 8.0 12 VGS = 4.5V
Output Gate Charge ––– 23 35 VGS = 0V, VDS = 16V
Turn-On Delay Time ––– 10 ––– VDD = 20V
Rise Time ––– 1.9 ––– ID = 8.0A
Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω
ns
Fall Time ––– 3.2 ––– VGS = 4.5V
Input Capacitance ––– 3430 ––– VGS = 0V
Output Capacitance ––– 690 ––– VDS = 20V
Reverse Transfer Capacitance ––– 41 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 300 mJ
Avalanche Current ––– 8.0 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.80 1.3 V TJ = 25°C, IS = 8.0A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 8.0A, VGS = 0V
2.3
85
showing the
A
p-n junction diode.
G
Reverse Recovery Time – –– 72 110 ns TJ = 25°C, IF = 8.0A, VR= 20V
Reverse Recovery Charge ––– 130 200 nC di/dt = 100A/µs
Reverse Recovery Time – –– 76 110 ns TJ = 125°C, IF = 8.0A, VR=20V
Reverse Recovery Charge ––– 150 230 nC di/dt = 100A/µs
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D
S
IRF7470
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
100
VGS
TOP
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM
2.0V
2.0V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.0V
2.7V
2.5V
2.25V
BOTTOM
2.0V
2.0V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
10A
I =
D
°
T = 150 C
J
°
T = 25 C
J
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
2.0 2.2 2.4 2.6 2.8 3.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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