International Rectifier IRF7469 Datasheet
A
PD- 93951A
SMPS MOSFET
IRF7469
HEXFET® Power MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
V
DSS
40V 17@VGS = 10V 9.0A
R
DS(on)
max(m
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 9.0
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 7.3 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , T
STG
Drain-Source Voltage 40 V
Gate-to-Source Voltage ± 20 V
Pulsed Drain Current 73
Junction and Storage Temperature Range -55 to + 150 °C
Ω)Ω)
Ω) I
Ω)Ω)
SO-8
D
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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3/25/01
IRF7469
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 40 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA
––– 12 17 VGS = 10V, ID = 9.0A
––– 15.5 21 VGS = 4.5V, ID = 7.2A
mΩ
Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 32V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 32V, VGS = 0V
µA
nA
VGS = -16V
Forward Transconductance 17 ––– ––– S VDS = 20V, ID = 7.2A
Total Gate Charge – –– 15 23 ID = 7.2A
Gate-to-Source Charge ––– 7.0 11 nC VDS = 20V
Gate-to-Drain ("Miller") Charge ––– 5.0 8.0 VGS = 4.5V
Output Gate Charge ––– 16 24 VGS = 0V, VDS = 16V
Turn-On Delay Time ––– 11 ––– VDD = 20V
Rise Time ––– 2.2 ––– ID = 7.2A
Turn-Off Delay Time ––– 14 ––– RG = 1.8Ω
ns
Fall Time ––– 3.5 ––– VGS = 4.5V
Input Capacitance ––– 2000 ––– VGS = 0V
Output Capacitance ––– 480 ––– VDS = 20V
Reverse Transfer Capacitance ––– 28 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 210 mJ
Avalanche Current ––– 7.2 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.80 1.3 V TJ = 25°C, IS = 7.2A, VGS = 0V
––– 0.65 ––– TJ = 125°C, IS = 7.2A, VGS = 0V
2.3
73
showing the
A
p-n junction diode.
G
Reverse Recovery Time – –– 47 71 ns TJ = 25°C, IF = 7.2A, VR=15V
Reverse Recovery Charge ––– 91 140 nC di/dt = 100A/µs
Reverse Recovery Time – –– 77 120 ns TJ = 125°C, IF = 7.2A, VR=20V
Reverse Recovery Charge ––– 15 0 230 nC di/dt = 100A/µs
2 www.irf.com
D
S
IRF7469
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
100
VGS
TOP
10V
8.0V
7.0V
5.0V
4.5V
4.0V
3.7V
BOTTOM
3.5V
3.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
10V
8.0V
7.0V
5.0V
4.5V
4.0V
3.7V
BOTTOM
3.5V
3.5V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
9.0A
I =
D
2.0
°
T = 150 C
J
1.5
°
T = 25 C
J
D
I , Drain-to-Source Current (A)
V = 25V
DS
10
3.5 4.0 4.5
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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