International Rectifier IRF7464 Datasheet
SMPS MOSFET
A
PD- 93895
IRF7464
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
max I
200V 0.73Ω 1.2A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.2
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.0 A
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
V
GS
dv/dt Peak Diode Recovery dv/dt 6.8 V/ns
T
J
T
STG
Pulsed Drain Current 10
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes through are on page 8
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4/25/00
IRF7464
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 48 ––– VGS = 0V, VDS = 0V to 160V
oss
Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.23 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance ––– ––– 0.73 Ω VGS = 10V, ID = 0.72A
Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 160V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 200V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 1.1 ––– ––– S VDS = 50V, ID = 0.72A
Total Gate Charge ––– 9.5 14 ID = 0.72A
Gate-to-Source Charge ––– 2.5 3.8 nC VDS = 160V
Gate-to-Drain ("Miller") Charge ––– 4.6 6. 9 VGS = 10V,
Turn-On Delay Time ––– 11 ––– VDD = 100V
Rise Time ––– 9. 5 ––– ID = 0.72A
Turn-Off Delay Time ––– 18 ––– RG = 24Ω
ns
Fall Time ––– 15 ––– VGS = 10V
Input Capacitance ––– 280 ––– VGS = 0V
Output Capacitance ––– 52 ––– VDS = 25V
Reverse Transfer Capacitance ––– 14 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 330 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 25 ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 68 mJ
Avalanche Current ––– 1.2 A
Repetitive Avalanche Energy ––– 0.25 mJ
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
Maximum Junction-to-Ambient ––– 50 °C/W
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.3
10
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 0.72A, VGS = 0V
Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 0.72A
Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs
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D
S
IRF7464
10
1
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
6.0V
6.0V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
10
°
T = 150 C
J
J
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
VGS
TOP
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM
6.0V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
6.0V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
2.5
I =
D
1.2A
2.0
°
T = 25 C
1
D
I , Drain-to-Source Current (A)
0.1
6.0 6.5 7.0 7.5 8.0
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
J
V = 50V
DS
20µs PULSE WIDTH
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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