International Rectifier IRF7463 Datasheet
PD- 93843A
SMPS MOSFET
IRF7463
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
Benefits
l Ultra-Low R
l Low Charge and Low Gate Impedance to
DS(on)
at 4.5V V
GS
Reduce Switching Losses
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
V
GS
T
J, TSTG
Pulsed Drain Current 110
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150
V
DSS
R
DS(on)
max I
30V 0.008Ω 14A
SO-8
D
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Typical SMPS Topologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes through are on page 7
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3/30/00
IRF7463
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.0063 0.0080 VGS = 10V, ID = 14A
Static Drain-to-Source On-Resistance
––– 0.0074 0.0095 VGS = 4.5V, ID = 12A
––– 0.0105 0.020 VGS = 2.8V, ID = 3.5A
Gate Threshold Voltage 0.6 ––– 2. 0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 100°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 31 ––– ––– S VDS = 24V, ID = 14A
Total Gate Charge ––– 34 51 ID = 14A
Gate-to-Source Charge ––– 7.5 11 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 13 20 VGS = 5.0V,
Turn-On Delay Time ––– 20 ––– VDD = 15V,
Rise Time ––– 16 ––– ID = 1.0A
Turn-Off Delay Time ––– 41 ––– RG = 6.0Ω
Fall Time ––– 44 ––– VGS = 4.5V
Input Capacitance ––– 3110 ––– VGS = 0V
Output Capacitance ––– 850 ––– VDS = 25V
Reverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHz
Ω
VDS = 24V, VGS = 0V
µA
nA
VGS = -12V
ns
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 320 mJ
Avalanche Current ––– 14 A
Repetitive Avalanche Energy ––– 0.25 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.5
110
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V
Reverse Recovery Time ––– 64 96 n s TJ = 25°C, IF = 2.5A
Reverse Recovery Charge ––– 99 150 nC di/dt = 100A/µs
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D
S
IRF7463
1000
100
10
1
TOP
BOTTOM
VGS
15V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
2.0V
2.0V
0.1
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
0.01
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000.00
J
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM
2.0V
2.0V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
1000
100.00
10.00
, Drain-to-Source Current (A)
D
I
TJ = 150°C
1.00
0.10
2.0 2.5 3.0 3.5 4.0 4.5
TJ = 25°C
V
= 15V
DS
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100
°
T = 150 C
J
10
°
T = 25 C
J
1
SD
I , Reverse Drain Current (A)
V = 0 V
0.1
0.0 0.4 0.8 1.2 1.6
V ,Source-to-Drain Voltage (V)
SD
GS
Fig 4. Typical Source-Drain Diode
Forward Voltage
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