International Rectifier IRF7459 Datasheet
A
PD- 93885B
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
HEXFET® Power MOSFET
V
DSS RDS(on)
20V 9.0mΩ 12A
IRF7459
max I
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
at 4.5V V
GS
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 10 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
TJ , T
STG
Drain-Source Voltage 20 V
Gate-to-Source Voltage ± 12 V
Pulsed Drain Current 100
Junction and Storage Temperature Range -55 to + 150 °C
D
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
www.irf.com 1
3/25/01
IRF7459
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Avalanche Characteristics
E
AS
I
AR
Drain-to-Source Breakdown Voltage 20 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.7 9.0 VGS = 10V, ID = 12A
Static Drain-to-Source On-Resistance
––– 8. 0 11 mΩ VGS = 4.5V, ID = 9.6A
––– 11 22 VGS = 2.8V, ID = 6.0A
Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 16V, VGS = 0V
µA
nA
VGS = -12V
Forward Transconductance 32 ––– ––– S VDS = 16V, ID = 9.6A
Total Gate Charge ––– 23 35 ID = 9.6A
Gate-to-Source Charge ––– 6.6 10 nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 6.3 9.5 VGS = 4.5V
Output Gate Charge ––– 17 26 VGS = 0V, VDS = 10V
Turn-On Delay Time ––– 10 ––– VDD = 10V,
Rise Time ––– 4.5 ––– ID = 9.6A
Turn-Off Delay Time ––– 20 ––– RG = 1.8Ω
ns
Fall Time ––– 5.0 ––– VGS = 4.5V
Input Capacitance ––– 2480 ––– VGS = 0V
Output Capacitance ––– 1030 ––– VDS = 10V
Reverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 290 mJ
Avalanche Current ––– 12 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.84 1.3 V TJ = 25°C, IS = 9.6A, VGS = 0V
––– 0.69 ––– TJ = 125°C, IS = 9.6A, VGS = 0V
2.5
100
showing the
A
p-n junction diode.
G
Reverse Recovery Time – –– 70 105 ns TJ = 25°C, IF = 9.6A, VR= 15V
Reverse Recovery Charge ––– 70 105 nC di/dt = 100A/µs
Reverse Recovery Time – –– 70 105 ns TJ = 125°C, IF = 9.6A, VR=15V
Reverse Recovery Charge ––– 75 113 nC di/dt = 100A/µs
2 www.irf.com
D
S
IRF7459
1000
100
10
1
, Drain-to-Source Current (A)
D
I
2.0V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000
VGS
TOP 15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
1000
100
10
, Drain-to-Source Current (A)
D
I
2.0V
20µs PULSE WIDTH
Tj = 150°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
12A
I =
D
VGS
TOP 15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
1.5
100
10
D
I , Drain-to-Source Current (A)
1
2.0 2.5 3.0 3.5 4.0
Fig 3. Typical Transfer Characteristics
°
T = 150 C
J
°
T = 25 C
J
V = 15V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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