International Rectifier IRF7458 Datasheet
A
PD- 93892C
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
HEXFET® Power MOSFET
V
DSS
30V 8.0mΩ 14A
R
DS(on)
IRF7458
max I
D
Computer Processor Power
Benefits
l Ultra-Low Gate Impedance
l Very Low R
l Fully Characterized Avalanche Voltage
DS(on)
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 mW/°C
TJ , T
STG
Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 30 V
Pulsed Drain Current 110
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
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3/25/01
IRF7458
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
Static Drain-to-Source On-Resistance
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 6.3 8.0 VGS = 16V, ID = 14A
––– 7.0 9.0 VGS = 10V, ID = 11A
mΩ
Gate Threshold Voltage 2 .0 –– – 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 24V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 24V, VGS = 0V
µA
nA
VGS = -24V
Forward Transconductance 26 ––– ––– S VDS = 15V, ID = 11A
Total Gate Charge ––– 39 59 ID = 11A
Gate-to-Source Charge ––– 11 17 nC VDS = 15V
Gate-to-Drain ("Miller") Charge ––– 8.7 13 VGS = 10V
Output Gate Charge ––– 29 44 VGS = 0V, VDS = 16V
Turn-On Delay Time ––– 10 ––– VDD = 15V
Rise Time ––– 4 .6 ––– ID = 11A
Turn-Off Delay Time ––– 22 ––– RG = 1.8Ω
ns
Fall Time ––– 5 .0 ––– VGS = 10V
Input Capacitance ––– 2410 ––– VGS = 0V
Output Capacitance ––– 1100 ––– VDS = 15V
Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 280 mJ
Avalanche Current ––– 11 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– 0.82 1.3 V TJ = 25°C, IS = 11A, VGS = 0V
––– 0.68 ––– TJ = 125°C, IS = 11A, VGS = 0V
2.3
110
showing the
A
p-n junction diode.
G
Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 11A, VR= 20V
Reverse Recovery Charge ––– 87 130 nC di/dt = 100A/µs
Reverse Recovery Time ––– 52 78 ns TJ = 125°C, IF = 11A, VR=20V
Reverse Recovery Charge ––– 93 140 nC di/dt = 100A/µs
2 www.irf.com
D
S
IRF7458
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
16V
12V
10V
8.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
16V
12V
10V
8.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
14A
I =
D
1.5
100
°
T = 150 C
J
°
T = 25 C
D
I , Drain-to-Source Current (A)
10
4.5 5.0 5.5 6.0
J
V = 15V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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