International Rectifier IRF7455 Datasheet
PD- 93842B
A
SMPS MOSFET
IRF7455
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Converters
with Synchronous Rectification
Benefits
l Ultra-Low R
l Low Charge and Low Gate Impedance to
DS(on)
at 4.5V V
GS
Reduce Switching Losses
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
V
GS
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A
I
DM
PD @TA = 25°C Maximum Power Dissipation 2.5 W
PD @TA = 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
TJ , T
STG
Drain-Source Voltage 30 V
Gate-to-Source Voltage ± 12 V
Pulsed Drain Current 120
Junction and Storage Temperature Range -55 to + 150 °C
V
DSS
R
DS(on)
max I
30V 0.0075Ω 15A
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
D
Thermal Resistance
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Typical SMPS Topologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes through are on page 8
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4/20/00
IRF7455
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 30 ––– – –– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient
J
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.00600.0075 VGS = 10V, ID = 15A
Static Drain-to-Source On-Resistance
––– 0.0069 0.009 VGS = 4.5V, ID = 12A
––– 0.010 0.020 VGS = 2.8V, ID = 3.5A
Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 20 0 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 44 ––– ––– S VDS = 10V, ID = 15A
Total Gate Charge ––– 37 56 ID = 15A
Gate-to-Source Charge ––– 8.9 13 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 13 20 VGS = 5.0V,
Turn-On Delay Time ––– 17 ––– VDD = 15V
Rise Time ––– 18 ––– ID = 1.0A
Turn-Off Delay Time ––– 51 ––– RG = 6.0Ω
Fall Time ––– 44 ––– VGS = 4.5V
Input Capacitance ––– 3480 ––– VGS = 0V
Output Capacitance ––– 870 ––– VDS = 25V
Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz
Ω
VDS = 24V, VGS = 0V
µA
nA
VGS = -12V
ns
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy ––– 200 mJ
Avalanche Current ––– 15 A
Repetitive Avalanche Energy ––– 0.25 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.5
120
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V
Reverse Recovery Time – –– 64 96 ns TJ = 25°C, IF = 2.5A
Reverse RecoveryCharge ––– 99 150 nC di/dt = 100A/µs
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D
S
IRF7455
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
1000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM
2.5V
2.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
2.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
10
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 150 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
15A
1.5
100
D
I , Drain-to-Source Current (A)
10
2.4 2.6 2.8 3.0 3.2 3.4
°
T = 150 C
J
°
T = 25 C
J
V = 15V
DS
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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