International Rectifier IRF7451 Datasheet
SMPS MOSFET
A
PD- 93898A
IRF7451
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
V
DSS
R
DS(on)
150V 0.09
max I
ΩΩ
Ω 3.6A
ΩΩ
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
S
S
S
1
2
3
4
Top View
A
8
D
7
D
6
D
5
DG
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.9 A
I
DM
PD @TA = 25°C Power Dissipation 2.5 W
V
GS
dv/dt Peak Diode Recovery dv/dt 7.9 V/ns
T
J
T
STG
Pulsed Drain Current 29
Linear Derating Factor 0.02 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
Notes through are on page 8
www.irf.com 1
01/31/01
IRF7451
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 180 ––– VGS = 0V, VDS = 0V to 120V
oss
Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.09 Ω VGS = 10V, ID = 2.2A
Gate Threshold Voltage 3.0 – –– 5.5 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 150V, VGS = 0V
µA
nA
VGS = -30V
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 3.5 ––– ––– S VDS = 25V, ID = 2.2A
Total Gate Charge ––– 28 41 ID = 2.2A
Gate-to-Source Charge ––– 6.8 10 nC VDS = 120V
Gate-to-Drain ("Miller") Charge ––– 13 20 VGS = 10V
Turn-On Delay Time ––– 10 ––– VDD = 75V
Rise Time ––– 4.2 ––– ID = 2.2A
Turn-Off Delay Time ––– 17 ––– RG = 6.5Ω
ns
Fall Time ––– 15 ––– VGS = 10V
Input Capacitance ––– 990 ––– VGS = 0V
Output Capacitance ––– 220 ––– VDS = 25V
Reverse Transfer Capacitance ––– 42 ––– pF ƒ = 1.0MHz
Output Capacitance ––– 1260 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 100 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
I
AR
Single Pulse Avalanche Energy ––– 210 mJ
Avalanche Current ––– 3.6 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
2.3
29
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 2.2A, VGS = 0V
Reverse Recovery Time ––– 76 110 ns TJ = 25°C, IF = 2.2A
Reverse RecoveryCharge ––– 270 400 nC di/dt = 100A/µs
2 www.irf.com
D
S
IRF7451
100
10
1
0.1
, Drain-to-Source Current (A)
D
0.01
I
5.0V
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
100
VGS
TOP 15.0V
12.0V
10.0V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
10
1
, Drain-to-Source Current (A)
D
I
5.0V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
3.6A
I =
D
VGS
TOP 15.0V
12.0V
10.0V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
°
10
1
0.1
D
I , Drain-to-Source Current (A)
0.01
T = 150 C
J
°
T = 25 C
J
V = 25V
DS
20µs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0
V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
www.irf.com 3
Loading...