International Rectifier IRF7416 Datasheet
PD - 9.1356D
IRF7416
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
S
S
1
2
3
4
Top View
A
8
DS
V
7
D
6
D
5
DG
R
DSS
DS(on)
= -30V
= 0.02Ω
SO-8
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10
@ TA = 70°C Continuous Drain Current, VGS @ - 10V -7.1
I
D
I
DM
= 25°C Power Dissipation 2.5
P
D @TA
V
GS
E
AS
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
T
J, TSTG
Pulsed Drain Current -45
Linear Derating Factor 0.02 mW/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 370 mJ
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Ratings
Parameter Typ. Max. Units
R
Maximum Junction-to-Ambient ––– 50
θJA
A
W
°C/W
8/25/97
IRF7416
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Gate-to-Source Reverse Leakage ––– – –– 10 0 VGS = 20V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– ––– 0.020 VGS = -10V, ID = -5.6A
––– ––– 0.035 VGS = -4.5V, ID = -2.8A
Ω
Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA
Forward Transconductance 5.6 ––– ––– S VDS = -10V, ID = -2.8A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– – –– -100 VGS = -20V
––– ––– -1.0 VDS = -24V, VGS = 0V
––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C
µA
nA
Total Gate Charge ––– 61 92 ID = -5.6A
Gate-to-Source Charge ––– 8.0 12 nC VDS = -24V
Gate-to-Drain ("Miller") Charge ––– 22 32 VGS = -10V, See Fig. 6 and 9
Turn-On Delay Time ––– 18 ––– VDD = -15V
Rise Time ––– 49 ––– ID = -5.6A
Turn-Off Delay Time ––– 59 ––– RG = 6.2Ω
ns
Fall Time ––– 60 ––– RD = 2.7Ω, See Fig. 10
Input Capacitance ––– 1700 ––– VGS = 0V
Output Capacitance ––– 890 ––– pF VDS = -25V
Reverse Transfer Capacitance ––– 41 0 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– -3.1
––– ––– - 4 5
Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -5.6A, VGS = 0V
Reverse Recovery Time ––– 56 85 ns TJ = 25°C, IF = -5.6A
Reverse RecoveryCharge ––– 99 150 nC di/dt = 100A/µs
I
≤ -5.6A, di/dt ≤ 100A/µs, V
SD
TJ ≤ 150°C
= 25°C, L = 25mH
J
= -5.6A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
D
A
DD
≤ V
(BR)DSS
,
G
S
IRF7416
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
10
D
-I , D r ain - to -S o ur c e Cu rr e n t ( A )
-3.0V
20µs PULSE WIDT H
T = 25 °C
1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
Fig 1. Typical Output Characteristics
100
100
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTT OM - 3.0V
10
-3.0V
D
-I , D r ain - to -S o ur c e Cu rr e n t ( A )
20µs PULSE WIDT H
T = 150°C
A
1
0.1 1 10
-V , Drain-to-Source Voltage (V)
DS
J
A
Fig 2. Typical Output Characteristics
2.0
I = -5 .6A
D
T = 25°C
J
T = 150° C
J
10
D
-I , Drain-to- So u rc e Cur r e n t ( A)
1
3.0 3.5 4.0 4.5 5.0 5.5
-V , G ate - to -S ourc e V o l ta g e (V )
GS
V = -1 0V
DS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
1.5
1.0
(No rm alized)
0.5
DS(on)
R , Dra in-to -S ourc e O n R e sista n ce
A
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Ju nc tio n T em perat u re ( °C )
J
V = -10V
GS
A
Fig 4. Normalized On-Resistance
Vs. Temperature
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